HN4A56JU(TE85L,F) Toshiba

HN4A56JU TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A56JU Unit: mm Audio Frequency General Purpose Amplifier Applications z Small Package (Dual Type) z High Voltage and High Current : V = 50V, I = 150mA (max) CEO C High z h FE z Excellent h Linearity FE : h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit 1.EMITTER1 (E1) Collector-base voltage V 50 V CBO 2.BASE (B) Collector-emitter voltage V 50 V 3.EMITTER2 (E2) CEO 4.COLLECTOR2 (C2) Emitter-base voltage V 5 V EBO 5.COLLECTOR1 (C1) Collector current I 150 mA C Base current I 30 mA B JEDEC Collector power dissipation P* 200 mW C JEITA Junction temperature T 150 C j TOSHIBA 2-2L1C Storage temperature range T 55 to 150 C stg Weight: 0.0062g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating: Power dissipation per element should not exceed 130mW. Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 50V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h V = 6V, I = 2mA 120 400 FE CE C Collector-emitter V I = 100mA, I = 10mA 0.1 0.3 V CE C B saturation voltage Transition frequency f V = 10V, I = 1mA 60 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 4 pF ob CB E Marking Equivalent Circuit (Top View) 4 5 37 Q2 Q1 Start of commercial production 2000-09 1 23 1 2014-03-01 HN4A56JU (Q1, Q2 Common) COLLECTOR P * Ta C 400 COLLECTOR 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta (C) COLLECTOR *:Total Rating 2 2014-03-01 COLLECTOR POWER DISSIPATION P (mW) C