HN7G01FU-A(T5L,F,T Toshiba

HN7G01FU TOSHIBA Multi Chip Discrete Device Preliminary HN7G01FU Power Management Switch Application Unit: mm Driver Circuit Application Interface Circuit Application Q1 (transistor): 2SA1955 equivalent Q2 (MOS-FET): 2SK1830 equivalent Q1 (transistor) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 15 V CBO Collector-emitter voltage V 12 V CEO Emitter-base voltage V 5 V EBO Collector current I 400 mA C Base current I 50 mA B Q2 (MOS-FET) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DS JEDEC Gate-source voltage V 10 V GSS JEITA Drain current I 50 mA D TOSHIBA Weight: 6.8 mg (typ.) Q1, Q2 Common Ratings (Ta = 25C) Characteristics Symbol Rating Unit P C Power dissipation 200 mW (Note 1) Junction temperature T 125 C j Storage temperature range T 55~150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Pin Assignment (top view) 1 2007-11-01 HN7G01FU Q1 (transistor) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 15 V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 0.1 mA EBO EB C h FE DC current gain V = 2 V, I = 10 mA 300 1000 CE C (Note 2) V I = 10 mA, I = 0.5 mA 15 30 CE (sat) (1) C B Collector-emitter saturation voltage mV V I = 200 mA, I = 10 mA 110 250 CE (sat) (2) C B Base-emitter saturation voltage V I = 200 mA, I = 10 mA 0.87 1.2 V BE (sat) C B Note 2: h classification A: 300~600, B: 500~1000 FE Q2 (MOS-FET) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 100 A, V = 0 20 V (BR) DSS D GS Drain current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 mS fs DS D Drain-source ON resistance R I = 10 mA, V = 2.5 V 20 40 DS (ON) D GS Application Example (power management switch) 2 2007-11-01