HN4C06J TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN4C06J Audio Frequency General Purpose Amplifier Applications Unit: mm z High voltage : V = 120V CEO z High h : h = 200 to 700 FE FE Excez llent h linearity FE : h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C z Low noise : NF = 1dB(typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage V 120 V CBO Collector-emitter voltage V 120 V CEO Emitter-base voltage V 5 V EBO 1.BASE1 (B1) 2.EMITTER (E) Collector current I 100 mA C 3.BASE2 (B2) Base current I 20 mA B 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Collector power dissipation P* 300 mW C Junction temperature T 150 C j Storage temperature range T 55 to 150 C JEDEC stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3L1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.014g(Typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Total rating. Power dissipation per element should not exceed 200mW. Electrical Characteristics (Ta = 25C) (Q1,Q2 Common) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit Collector cut-off current I V = 120V, I = 0 0.1 A CBO CB E Emitter cut-off current I V = 5V, I = 0 0.1 A EBO EB C DC current gain h V = 6V, I = 2mA 200 700 FE CE C Collector-emitter saturation voltage V I = 10mA, I = 1mA 0.3 V CE (sat) C B Transition frequency f V = 6V, I = 1mA 100 MHz T CE C Collector output capacitance C V = 10V, I = 0, f = 1MHz 3.0 pF ob CB E V = 6 V, I = 0.1 mA CE C Noise figure NF 1.0 dB f = 1 kHz, R = 10 k G Note: h Classification GR(G): 200 to 400, BL (L): 350 to 700 ( ) Marking Symbol. FE Marking Equivalent Circuit (Top View) Type Name 5 4 h Rank FE Q2 Q1 DG Start of commercial production 2000-03 1 23 1 2014-03-01 HN4C06J (Q1,Q2 Common) 2 2014-03-01