X-On Electronics has gained recognition as a prominent supplier of ND242S10K Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. ND242S10K Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

ND242S10K Infineon

ND242S10K electronic component of Infineon
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Part No.ND242S10K
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 1000V 410A
Datasheet: ND242S10K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 137.9557
5 : USD 137.9557
10 : USD 137.9557
25 : USD 137.9557
100 : USD 137.9557
250 : USD 131.2917
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 142.11
N/A

Obsolete
   
Manufacturer
Product Category
Mounting
Case
Electrical Mounting
Semiconductor Structure
Type Of Module
Max Load Current
Max Forward Impulse Current
Max Forward Voltage
Max Off-State Voltage
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We are delighted to provide the ND242S10K from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ND242S10K and other electronic components in the Discrete Semiconductor Modules category and beyond.

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European Power- Semiconductor and Electronics Company Marketing Information DD 242 S 28,5 35 6 115 80 9 18 M8 18 92 AK K A VWK Febr. 1997DD 242 S Elektrische Eigenschaften Electrical properties Hchstzulssige Werte Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltage t = -40C...t V DD 242 S: 400 600 800 1000 V vj vj max RRM t = +25C...t V = V Stospitzenspannung non-repetitive peak reverse voltage + 50 V vj vj max RSM RRM Durchlastrom-Grenzeffektivwert RMS forward current I 410 A FRMSM Dauergrenzstrom average forward current t = 100C I 240 A c FAVM t = 94C 261 A c Stostrom-Grenzwert surge current t 25C, t = 10 ms I 9300 A vj p FSM t = t , t = 10 ms 7500 A vj vj max p 2 2 2 t 25C, t = 10 ms Grenzlastintegral I t-value I t 432000 A s vj p 2 t = t , t = 10 ms 281000 A s vj vj max p Charakteristische Werte Characteristic values Durchlaspannung forward voltage t = t , i = 800 A v max. 1,55 V vj vj max F F V Schleusenspannung threshold voltage 1,1 V (TO) r Ersatzwiderstand slope resistance 0,5 m T t = t , v = V i Sperrstrom reverse current max. 200 mA vj vj max R RRM R Rckstromspitze peak reverse recovery current t = t , i = 250 A, I vj vj max FM RM -di /dt = 100 A/s max. 98 A F Sperrverzugsladung recovered charge t = t , i = 250 A, Q vj vj max FM r -di /dt = 100 A/s max. 120 As F V Isolations-Prfspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 3 kV ISOL Thermische Eigenschaften Thermal properties Innerer Wrmewiderstand thermal resistance, junction R max. 0,075 C/W =180el. sin: pro Modul/per module thJC to case pro Zweig/per arm max. 0,15 C/W DC: pro Modul/per module max. 0,072 C/W pro Zweig/per arm max. 0,144 C/W R bergangs-Wrmewiderstand thermal resistance, case to heatsink pro Modul/per module max. 0,02 C/W thCK pro Zweig/per arm max. 0,04 C/W t Hchstzul.Sperrschichttemperatur max. junction temperature 150 C vj max Betriebstemperatur operating temperature t -40...+150 C c op Lagertemperatur storage temperature t -40...+150 C stg Mechanische Eigenschaften Mechanical properties Si-Elemente mit Druckkontakt Si-pellets with pressure contact Innere Isolation internal insulation AIN Anzugsdrehmomente tightening torques mechanische Befestigung mounting torque Toleranz/tolerance +/- 15% M1 6 Nm elektrische Anschlsse terminal connection torque Toleranz/tolerance +5%/-10% M2 12 Nm Gewicht weight G typ. 800 g Kriechstrecke creepage distance 17 mm Schwingfestigkeit vibration resistance f = 50 Hz 5 9,81 m/s Mabild outline 8 DD 242 S kann auch mit gemeinsamer Anode oder gemeinsamer Kathode geliefert werden. DD 242 S can also be supplied with common anode or common cathode.

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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Cypress / Spansion
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INF
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Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
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