NCP341MUTBG ON Semiconductor

NSR20F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. NSR20F30NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 213 C/W JA Total Power Dissipation T = 25C P 586 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA Total Power Dissipation T = 25C P 1.56 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 20 R (V = 30 V) 150 R Forward Voltage V V F (I = 1.0 A) 0.42 F (I = 2.0 A) 0.48 F 10 100000 150C 10000 T = 125C J 125C 1000 1 T = 150C J 75C 100 10 0.1 25C 1 0.01 0.1 25C 0.01 75C 25C 25C 0.001 0.001 0.0 0.1 0.2 0.3 0.4 0.50251105025 30 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 2. Typical Reverse Current Figure 1. Forward Voltage 450 T = 25C A 400 350 300 250 200 150 100 50 0 0150 1520 2530 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance