2N6028 Central Semiconductor

2N6027 2N6028 www.centralsemi.com SILICON DESCRIPTION: PROGRAMMABLE The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 UNIJUNCTION TRANSISTORS devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (I ), Peak Current (I ), and Intrinsic V P Standoff Ratio (). MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Gate-Cathode Forward Voltage V 40 V GKF Gate-Cathode Reverse Voltage V 5.0 V GKR Gate-Anode Reverse Voltage V 40 V GAR Anode-Cathode Voltage V 40 V AK Peak Non-Repetitive Forward Current (t=10s) I 5.0 A TSM Peak Repetitive Forward Current (t=20s, D.C.=1.0%) I 2.0 A TRM Peak Repetitive Forward Current (t=100s, D.C.=1.0%) I 1.0 A TRM DC Forward Anode Current I 150 mA T DC Gate Current I 50 mA G Power Dissipation P 300 mW D Operating Junction Temperature T -50 to +100 C J Storage Temperature T -55 to +150 C stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A 2N6027 2N6028 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=40V - 10 - 10 nA GAO S I V=40V - 50 - 50 nA GKS S I V =10V, R =1.0M - 2.0 - 0.15 A P S G I V =10V, R =10k - 5.0 - 1.0 A P S G I V =10V, R =1.0M - 50 - 25 A V S G I V =10V, R =10k 70 - 25 - A V S G I V =10V, R =200 1.5 - 1.0 - mA V S G V V =10V, R =1.0M 0.2 1.6 0.2 0.6 V T S G V V =10V, R =10k 0.2 0.6 0.2 0.6 V T S G V I=50mA - 1.5 - 1.5 V F F V V =20V, C=0.2F 6.0 - 6.0 - V O B C t V =20V, C=0.2F - 80 - 80 ns r B C R2 (4-February 2014)2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Anode 2) Gate 3) Cathode MARKING: FULL PART NUMBER R2 (4-February 2014) www.centralsemi.com