TS110-7A1-AP STMicroelectronics

TS110-7 High surge voltage 1.25 A SCR for circuit breaker Datasheet - production data Features On-state rms current, 1.25 A Repetitive peak off-state voltage, 700 V A Non-repetitive direct surge peak off-state voltage, 1250 V Non-repetitive reverse surge peak off-state voltage, 850 V Triggering gate current, 100 A G A Description K Thanks to highly sensitive triggering levels, the K TS110-7 series is suitable for circuit breaker G applications where the available gate current is limited. Such applications include GFCI (ground SMBflat-3L TS110-7UF fault circuit interrupter), AFCI (arc fault circuit interrupter), RCD (residual current device), and K RCBO (residual current circuit breaker with overload protection). G A The 1250 V surge voltage capability of the TO-92 with GAK pinout TS110-7A1 TS110-7 enables high robustness of the whole circuit breaker. The low leakage current of the TS110-7 reduces power consumption over the entire lifetime of the circuit breaker. The TS110-7 is available in through-hole TO-92 package with GAK pinout and in SMBflat-3L. June 2014 DocID022271 Rev 4 1/10 This is information on a product in full production. www.st.comCharacteristics TS110-7 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-92 T = 58 C l I On-state rms current (180 conduction angle) 1.25 A T(RMS) SMBflat-3L T = 110 C tab TO-92 T = 58 C Average on-state current l IT 0.8 A (AV) (180 conduction angle) SMBflat-3L T = 110 C tab t = 8.3 ms 27 p Non repetitive surge peak on-state current t = 10 ms 25 p I A TSM 1st step: one surge every 5 seconds, 25 surges 25 times 12 A, t = 10 ms T = 25 C p j initial 25 times 16 A 2nd step: one surge every 5 seconds, 25 surges 2 ItI t Value for fusing t = 10 ms 3.1 A S p Critical rate of rise of on-state current F = 60 Hz T = 125 C 100 j I = 2 x I , t 100 ns G GT r dI/dt A/s Critical rate of rise of on-state current T = 25 C 100 j Gate open, V = V , t 100 ns D BO r V , DRM Repetitive peak off-state voltage, gate open T = 125 C 700 V j V RRM Non-repetitive direct surge peak off-state t = 50 s T = 25 C 1250 V V DSM p j voltage, R = 220 GK Non-repetitive reverse surge peak off-state V t = 50 s T = 25 C 850 V RSM p j voltage, R = 220 GK I Peak gate current t = 20 s T = 125 C 1.2 A GM p j P Average gate power dissipation T = 125 C 0.2 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j Table 2. Electrical characteristics Symbol Test conditions Value Unit Min. 1 I A GT V = 12 V, R = 140 T = 25 C Max. 100 D L j V Max. 0.8 V GT V V = V , R = 33 k, R = 220 T = 125 C Min. 0.1 V GD D DRM L GK j V I = 2 mA T = 25 C Min. 7.5 V RG RG j I I = 50 mA, R = 220 T = 25 C Max. 2 mA H T GK j I I = 5 mA, R = 220 T = 25 C Max. 2 mA L G GK j dV/dt V = 67% V R = 220 T = 125 C Min. 15 V/s D DRM, GK j 2/10 DocID022271 Rev 4