X-On Electronics has gained recognition as a prominent supplier of VS-10TTS08STRLPBF SCRs across the USA, India, Europe, Australia, and various other global locations. VS-10TTS08STRLPBF SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-10TTS08STRLPBF Vishay

VS-10TTS08STRLPBF electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.VS-10TTS08STRLPBF
Manufacturer: Vishay
Category: SCRs
Description: Vishay Semiconductors SCRs 800 Volt 140 Amp
Datasheet: VS-10TTS08STRLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.5731
10 : USD 1.3028
100 : USD 1.0049
500 : USD 0.8801
800 : USD 0.7676
2400 : USD 0.7676
4800 : USD 0.7676
9600 : USD 0.7383
24800 : USD 0.7091
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Height
Length
Type
Width
Cnhts
Hts Code
Product Type
Subcategory
Taric
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We are delighted to provide the VS-10TTS08STRLPBF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-10TTS08STRLPBF and other electronic components in the SCRs category and beyond.

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VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage Surface Mount Phase Control SCR, 10 A 2, 4 FEATURES Anode 4 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: 3 1 3 for definitions of compliance please see Cathode Gate 1 www.vishay.com/doc 99912 2 TO-263AB (D PAK) APPLICATIONS Input rectification (soft start) PRODUCT SUMMARY 2 Vishay input diodes, switches and output rectifiers which Package TO-263AB (D PAK) are available in identical package outlines Diode variation Single SCR I 6.5 A DESCRIPTION T(AV) V /V 800 V The VS-10TTS08SPbF high voltage series of silicon DRM RRM controlled rectifiers are specifically designed for medium V < 1.15 V TM power switching and phase control applications. The glass I 15 mA GT passivation technology used has reliable operation up to T -40 to +125 C J 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 3.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 6.3 9.5 thCA Aluminum IMS with heatsink, R = 5 C/W 14.0 18.5 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 6.5 T(AV) A I 10 RMS V /V 800 V RRM DRM I 110 A TSM V 6.5 A, T = 25 C 1.15 V T J dV/dt 150 V/s dI/dt 100 A/s T Range -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER PEAK REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-10TTS08SPbF 800 800 1.0 Revision: 08-Jul-15 Document Number: 94562 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I 6.5 T(AV) T = 112 C, 180 conduction half sine wave C Maximum RMS on-state current I 10 T(RMS) A 10 ms sine pulse, rated V applied, T = 125 C 95 Maximum peak, one-cycle, RRM J I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied, T = 125 C 110 J 10 ms sine pulse, rated V applied, T = 125 C 45 RRM J 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied, T = 125 C 64 J 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s J Maximum on-state voltage drop V 6.5 A, T = 25 C 1.15 V TM J On-state slope resistance r 17.3 m t T = 125 C J Threshold voltage V 0.85 V T(TO) T = 25 C 0.05 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 1.0 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Typical holding current I 30 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 50 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 100 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 20 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 15 mA GT J Anode supply = 6 V, resistive load, T = 125 C 10 J Anode supply = 6 V, resistive load, T = - 65 C 1.2 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 1 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 0.7 J Maximum DC gate voltage not to trigger V 0.2 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 0.1 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.8 gt J Typical reverse recovery time t 3 s rr T = 125 C J Typical turn-off time t 100 q Revision: 08-Jul-15 Document Number: 94562 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
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DLE
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