CS 45 V = 800-1600 V Phase Control Thyristor RRM I = 75 A T(RMS) I = 48 A T(AV)M TM TO-247 AD ISOPLUS 247 V V Type RSM RRM Version io1 Version io1R A C V V DSM DRM VV C C A A G G G 900 800 CS 45-08io1 Isolated A (TAB) back surface 1300 1200 CS 45-12io1 * * Patent pending 1700 1600 CS 45-16io1 CS 45-16io1R C = Cathode, A = Anode, G = Gate Symbol Conditions Maximum Ratings Features I T = T 75 A T(RMS) VJ VJM Thyristor for line frequency I T = 75C 180 sine 48 A T(AV)M C International standard package JEDEC TO-247 I T = 45C t = 10 ms (50 Hz), sine 520 A TSM VJ Planar passivated chip V = 0 V t = 8.3 ms (60 Hz), sine 560 A R Long-term stability of blocking T = T t = 10 ms (50 Hz), sine 460 A currents and voltages VJ VJM V = 0 V t = 8.3 ms (60 Hz), sine 500 A Version AR isolated and R UL registered E153432 2 2 I t T = 45C t = 10 ms (50 Hz), sine 1350 A s VJ Epoxy meets UL 94V-0 2 V = 0 V t = 8.3 ms (60 Hz), sine 1300 A s R 2 T = T t = 10 ms (50 Hz), sine 1050 A s VJ VJM 2 V = 0 V t = 8.3 ms (60 Hz), sine 1030 A s R Applications (di/dt) T = T repetitive, I = 40 A 150 A/s cr VJ VJM T f = 50 Hz, t = 200 s P Motor control 2 V = / V Power converter D 3 DRM I = 0.3 A non repetitive, I = I 500 A/s AC power controller G T T(AV)M di /dt = 0.3 A/s Switch-mode and resonant mode G power supplies 2 (dv/dt) T = T V = / V 1000 V/s cr VJ VJM DR 3 DRM Light and temperature control R = method 1 (linear voltage rise) GK P T = T t = 30 s 10 W GM VJ VJM P I = I t = 300 s 5 W T T(AV)M P Advantages P 0.5 W G(AV) V 10 V Easy to mount with 1 screw RGM (isolated mounting screw hole) T -40...+140 C VJ Space and weight savings T 140 C VJM Simple mounting T -40...+125 C stg Improved temperature and power cycling M Version io1: mounting torque M3 0.8...1.2 Nm d F Version io1R: mounting force with clip 20...120 N C V * 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~ ISOL Weight 6g * Verson io1R only Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 1 - 3 2000 IXYS All rights reserved 030CS 45 Symbol Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I T = T V = V V = V 5mA R D VJ VJM R RRM D DRM 2: I , T = 25C GT VJ V 3: I , T = -40C GT VJ V I = 80 A T = 25 C 1.64 V T T VJ V G V For power-loss calculations only (T = 125C) 0.85 V T0 VJ r 11 m T V V = 6 V T = 25C 1.5 V GT D VJ 6 1 5 T = -40C 1.6 V 3 VJ 2 1 I V = 6 V T = 25C 100 mA GT D VJ 4 T = -40C 200 mA VJ 2 V T = T V = / V 0.2 V GD VJ VJM D 3 DRM I 10 mA GD 4: P = 0.5 W GAV 5: P = 5 W GM I , T =125C I T = 25C t = 10 s 150 mA GD VJ L VJ P 6: P = 10 W GM I = 0.3 A di /dt = 0.3 A/s G G 0.1 1 10 100 1000 mA 10000 I I T = 25C V = 6 V R = 100 mA G H VJ D GK Fig. 1 Gate trigger range t T = 25C V = V 2s gd VJ D DRM I = 0.3 A di /dt = 0.3 A/s G G R DC current 0.62 K/W thJC 1000 R DC current 0.82 K/W T = 25C thJH VJ 2 a Max. acceleration, 50 Hz 50 m/s s t gd typ. Limit 100 TM TO-247 AD and ISOPLUS 247 Dim. Millimeter Inches Min. Max. Min. Max. 10 A 19.81 20.32 0.780 0.800 B 20.80 21.46 0.819 0.845 C 15.75 16.26 0.610 0.640 D* 3.55 3.65 0.140 0.144 E 4.32 5.49 0.170 0.216 1 F 5.4 6.2 0.212 0.244 10 100 mA 1000 I G 1.65 2.13 0.065 0.084 G H - 4.5 - 0.177 Fig. 2 Gate controlled delay time t gd J 1.0 1.4 0.040 0.055 K 10.8 11.0 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 TM * ISOPLUS 247 without hole 2 - 3 2000 IXYS All rights reserved