VS-10TTS08S-M3 Series
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage Surface Mount Phase Control SCR, 10 A
FEATURES
2, 4
Meets MSL level 1, per J-STD-020,
Anode
LF maximum peak of 245 C
Designed and qualified according
JEDEC -JESD 47
2
1 Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1 3
3
Cathode
Gate
2 APPLICATIONS
D PAK (TO-263AB)
Input rectification (soft start)
Vishay input diodes, switches and output rectifiers which
PRIMARY CHARACTERISTICS
are available in identical package outlines
I 6.5 A
T(AV)
V /V 800 V
DRM RRM
DESCRIPTION
V < 1.15 V
TM
The VS-10TTS08S-M3 high voltage series of silicon
I 15 mA
GT
controlled rectifiers are specifically designed for medium
T -40 to +125 C
J
power switching and phase control applications. The glass
2
Package D PAK (TO-263AB)
passivation technology used has reliable operation up to
Circuit configuration Single SCR
125 C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy
2.5 3.5
with 4 oz. (140 m) copper
A
Aluminum IMS, R = 15 C/W 6.3 9.5
thCA
Aluminum IMS with heatsink, R = 5 C/W 14.0 18.5
thCA
Note
2
T = 55 C, T = 125 C, footprint 300 mm
A J
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I Sinusoidal waveform 6.5
T(AV)
A
I 10
RMS
V /V 800 V
RRM DRM
I 110 A
TSM
V 6.5 A, T = 25 C 1.15 V
T J
dV/dt 150 V/s
dI/dt 100 A/s
T Range -40 to +125 C
J
VOLTAGE RATINGS
V , MAXIMUM V , MAXIMUM PEAK I /I
RRM DRM RRM DRM
PART NUMBER PEAK REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C
V V mA
VS-10TTS08S-M3 800 800 1.0
Revision: 04-Jan-17 Document Number: 96410
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10TTS08S-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average on-state current I 6.5
T(AV)
T = 112 C, 180 conduction half sine wave
C
Maximum RMS on-state current I 10
T(RMS)
A
10 ms sine pulse, rated V applied, T = 125 C 95
Maximum peak, one-cycle, RRM J
I
TSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied, T = 125 C 110
J
10 ms sine pulse, rated V applied, T = 125 C 45
RRM J
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied, T = 125 C 64
J
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s
J
Maximum on-state voltage drop V 6.5 A, T = 25 C 1.15 V
TM J
On-state slope resistance r 17.3 m
t
T = 125 C
J
Threshold voltage V 0.85 V
T(TO)
T = 25 C 0.05
J
Maximum reverse and direct leakage current I /I V = rated V /V
RM DM R RRM DRM
T = 125 C 1.0
J
mA
Anode supply = 6 V, resistive load, initial I = 1 A,
T
Typical holding current I 30
H
T = 25 C
J
Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 50
L J
Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open V/s
J J DRM g
Maximum rate of rise of turned-on current dI/dt 100 A/s
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum peak gate power P 8.0
GM
W
Maximum average gate power P 2.0
G(AV)
Maximum peak positive gate current +I 1.5 A
GM
Maximum peak negative gate voltage -V 10 V
GM
Anode supply = 6 V, resistive load, T = - 65 C 20
J
Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 15 mA
GT J
Anode supply = 6 V, resistive load, T = 125 C 10
J
Anode supply = 6 V, resistive load, T = - 65 C 1.2
J
Maximum required DC gate
V Anode supply = 6 V, resistive load, T = 25 C 1
GT J
voltage to trigger
V
Anode supply = 6 V, resistive load, T = 125 C 0.7
J
Maximum DC gate voltage not to trigger V 0.2
GD
T = 125 C, V = rated value
J DRM
Maximum DC gate current not to trigger I 0.1 mA
GD
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t T = 25 C 0.8
gt J
Typical reverse recovery time t 3 s
rr
T = 125 C
J
Typical turn-off time t 100
q
Revision: 04-Jan-17 Document Number: 96410
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000