VS-10BQ060HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Meets JESD 201 class 2 whisker test I 1.0 A F(AV) AEC-Q101 qualified V 60 V R Material categorization: for definitions of compliance V at I 0.42 V F F please see www.vishay.com/doc 99912 I 8 mA at 125 C RM DESCRIPTION T max. 150 C J The VS-10BQ060HM3 surface mount Schottky rectifier has E 2.0 mJ AS been designed for applications requiring low forward drop Package SMB and very small foot prints on PC boards. Typical Diode variation Single die applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 60 V RRM I t = 5 s sine 700 A FSM p V 1.0 A , T = 125 C 0.42 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10BQ060HM3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 116 C, rectangular waveform 1.0 A F(AV) L Following any rated 5 s sine or 3 s rect. pulse 700 Maximum peak one cycle I load condition and with A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 42 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 27-Oct-15 Document Number: 95724 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10BQ060HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.49 T = 25 C J 2 A 0.60 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.42 T = 125 C J 2 A 0.56 T = 25 C 0.1 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 8.0 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 80 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, (2) R DC operation 36 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) 1H Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 27-Oct-15 Document Number: 95724 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000