VT1045C, VIT1045C www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.34 V at I = 2.5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AB TO-262AA Low forward voltage drop, low power losses K High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 3 2 2 1 TYPICAL APPLICATIONS 1 For use in high frequency DC/DC converters, switching VT1045C VIT1045C power supplies, freewheeling diodes, OR-ing diode, and PIN 1 reverse battery protection. PIN 1 PIN 2 PIN 2 K PIN 3 CASE PIN 3 MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating PRIMARY CHARACTERISTICS Base P/N-M3 - halogen-free, RoHS-compliant, and I 2 x 5.0 A F(AV) commercial grade V 45 V RRM Terminals: matte tin plated leads, solderable per I 100 A FSM J-STD-002 and JESD 22-B102 V at I = 5.0 A 0.41 V F F M3 suffix meets JESD 201 class 1A whisker test T max. 150 C Polarity: as marked J Package TO-220AB, TO-262AA Mounting Torque: 10 in-lbs maximum Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1045C VIT1045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 10 Maximum average forward rectified current (fig. 1) I A F(AV) per diode 5.0 Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load per diode Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 09-Nov-17 Document Number: 89348 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT1045C, VIT1045C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOLTYP.MAX.UNIT I = 2.5 A 0.44 - F T = 25 C A I = 5.0 A 0.49 0.58 F (1) Instantaneous forward voltage per diode V V F I = 2.5 A 0.34 - F T = 125 C A I = 5.0 A 0.41 0.50 F T = 25 C - 500 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 5 15 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT1045CVIT1045CUNIT per diode 3.5 Typical thermal resistance R C/W JC per device 2.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT1045C-M3/4W 1.87 4W 50/tube Tube TO-262AA VIT1045C-M3/4W 1.45 4W 50/tube Tube Revision: 09-Nov-17 Document Number: 89348 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000