VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.58 V at I = 2.5 A F F FEATURES Trench MOS Schottky technology TMBS TO-220AC ITO-220AC Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder dip 275 C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA package) 2 2 1 Material categorization: for definitions of compliance 1 VT5200 VFT5200 please see www.vishay.com/doc 99912 PIN 1 PIN 1 PIN 2 CASE PIN 2 TYPICAL APPLICATIONS For use in high frequency converters, switching power TO-263AB TO-262AA supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB and TO-262AA A Molding compound meets UL 94 V-0 flammability rating A NC Base P/N-E3 - RoHS compliant, commercial grade K NC Terminals: Matte tin plated leads, solderable per VBT5200 VIT5200 J-STD-002 and JESD 22-B102 NC K K NC E3 suffix meets JESD 201 class 1A whisker test A HEATSINK HEATSINK A Polarity: As marked Mounting Torque: 10 in-lbs max. PRIMARY CHARACTERISTICS I 5.0 A F(AV) V 200 V RRM I 80 A FSM V at I = 5.0 A 0.65 V F F T max. 150 C J TO-220AC, ITO-220AC, Package TO-263AB, TO-262AA Diode variation Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT5200 VFT5200 VBT5200 VIT5200 UNIT Max. repetitive peak reverse voltage V 200 V RRM Max. average forward rectified current (fig. 1) I 5.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 80 A FSM superimposed on rated load Non-repetitive avalanche energy at T = 25 C, L = 60 mH E 30 mJ J AS Peak repetitive reverse current I 0.5 A RRM at t = 2 s, 1 kHz, T = 38 C 2 C p J Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AC only) V 1500 V AC from terminal to heatsink t = 1 min Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 27-Feb-18 Document Number: 89176 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONSSYMBOL TYP.MAX.UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (min.) - V R A BR I = 2.5 A 0.81 - F T = 25 C A I = 5.0 A 1.10 1.60 F (1) Instantaneous forward voltage V V F I = 2.5 A 0.58 - F T = 125 C A I = 5.0 A 0.65 0.73 F T = 25 C 1.7 - A A V = 180 V R T = 125 C 1.8 - mA A (2) Reverse current I R T = 25 C - 150 A A V = 200 V R T = 125 C 2.5 10 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VT5200 VFT5200 VBT5200 VIT5200 UNIT Typical thermal resistance R 3.5 7.0 3.5 3.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC VT5200-E3/4W 1.82 4W 50/tube Tube ITO-220AC VFT5200-E3/4W 1.65 4W 50/tube Tube TO-263AB VBT5200-E3/4W 1.36 4W 50/tube Tube TO-263AB VBT5200-E3/8W 1.36 8W 800/reel Tape and reel TO-262AA VIT5200-E3/4W 1.44 4W 50/tube Tube Revision: 27-Feb-18 Document Number: 89176 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000