VS-10BQ015HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability 125 C T operation (V < 5 V) J R Optimized for OR-ing applications High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Package SMB Meets JESD 201 class 2 whisker test I 1.0 A F(AV) AEC-Q101 qualified V 15 V R Material categorization: for definitions of compliance V at I 0.21 V F F please see www.vishay.com/doc 99912 I 35 mA at 100 C RM T max. 125 C J DESCRIPTION Diode variation Single die The VS-10BQ015HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop E 1.0 mJ AS and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 15 V RRM I t = 5 s sine 140 A FSM p V 1.0 A , T = 125 C 0.21 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10BQ015HM3UNITS Maximum DC reverse voltage V 15 R V Maximum working peak reverse voltage V 25 RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 134 C, rectangular waveform 1.0 A F(AV) L See fig. 5 Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 140 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 40 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 2 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 10-Mar-16 Document Number: 95722 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10BQ015HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.33 T = 25 C J 2 A 0.39 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.21 T = 125 C J 2 A 0.29 T = 25 C 0.5 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 100 C 35 J Threshold voltage V -V F(TO) T = T maximum J J Forward slope resistance r -m t Typical junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 390 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation (2) R 36 thJL junction to lead See fig. 4 C/W Maximum thermal resistance, R DC operation 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar to DO-214AA) 1C Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 10-Mar-16 Document Number: 95722 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000