VS-10BQ030-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Very low forward voltage drop Cathode Anode High frequency operation Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak SMB of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY Package SMB DESCRIPTION I 1.0 A F(AV) The VS-10BQ030-M3 surface mount Schottky rectifier has V 30 V R been designed for applications requiring low forward drop V at I 0.420 V and small foot prints on PC boards. Typical applications are F F in disk drives, switching power supplies, converters, I max. 15 mA at 125 C RM freewheeling diodes, battery charging, and reverse battery T max. 150 C J protection. Diode variation Single die E 3.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 30 V RRM I t = 5 ms sine 430 A FSM p V 1.0 A , T = 125 C 0.30 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-10BQ030-M3 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 106 C, rectangular waveform 1.0 F(AV) L 5 s sine or 3 s rect. pulse 430 Maximum peak one cycle Following any rated A non-repetitive surge current I load condition and with FSM See fig. 6 10 ms sine or 6 ms rect. pulse rated V applied 90 RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 28-Aug-14 Document Number: 95738 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10BQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.420 T = 25 C J 2 A 0.470 (1) Maximum forward voltage drop V V FM 1 A 0.300 T = 125 C J 2 A 0.370 T = 25 C 0.5 J (1) Maximum reverse leakage current I T = 100 C V = Rated V 5.0 mA RM J R R T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 200 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and (1) T , T -55 to +150 C J Stg storage temperature range Maximum thermal resistance, (2) R DC operation 25 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) 1E Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB 10 10 T = 125 C J T = 100 C 1 J T = 75 C J T = 125 C 0.1 J T = 25 C J 1 T = 50 C J 0.01 T = 25 C J 0.001 0.1 0.0001 0 0.2 0.4 0.6 0.8 0 10 20 30 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Revision: 28-Aug-14 Document Number: 95738 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R