VS-10BQ060-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: For definitions of compliance Package SMB please see www.vishay.com/doc 99912 I 1.0 A F(AV) DESCRIPTION V 60 V R The VS-10BQ060-M3 surface mount Schottky rectifier has V at I 0.42 V F F been designed for applications requiring low forward drop I 8 mA at 125 C RM and very small foot prints on PC boards. Typical T max. 150 C J applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and Diode variation Single die reverse battery protection. E 2.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 60 V RRM I t = 5 s sine 700 A FSM p V 1.0 Apk, T = 125 C 0.42 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-10BQ060-M3UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 116 C, rectangular waveform 1.0 A F(AV) L Following any rated 5 s sine or 3 s rect. pulse 700 Maximum peak one cycle I load condition and with A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 42 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 29-May-12 Document Number: 93357 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10BQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.49 T = 25 C J 2 A 0.60 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.42 T = 125 C J 2 A 0.56 T = 25 C 0.1 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 8.0 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 80 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of charge dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage (1) T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, (2) R DC operation 36 thJL junction to lead C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar DO-214AA) 1H Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB Revision: 29-May-12 Document Number: 93357 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000