VS-100BGQ015HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES Ultralow forward voltage drop Optimized for OR-ing applications Cathode Anode Guard ring for enhanced ruggedness and long term reliability Screw mounting only AEC-Q101 qualified 125 C max. operating junction temperature PowerTab (V < 5 V) R High frequency operation Continuous high current operation PRODUCT SUMMARY PowerTab package Package PowerTab Material categorization: for definitions of compliance I 100 A F(AV) please see www.vishay.com/doc 99912 V 15 V R DESCRIPTION V at I 0.45 V F F The VS-100BGQ015HF4 Schottky rectifier has been I 870 mA at 100 C RM optimized for ultralow forward voltage drop specifically for T max. 125 C J the OR-ing of parallel power supplies. The proprietary Diode variation Single die barrier technology allows for reliable operation up to 125 C junction temperature. Typical applications are in parallel E 9 mJ AS switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 100 A I F(AV) T 88 C C V 15 V RRM I t = 5 s sine 5000 A FSM p 100 A (typical) 0.39 V pk V F T 125 C J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOLTEST CONDITIONSVS-100BGQ015HF4 UNITS T = 100 C 15 J Maximum DC reverse voltage V V R T = 125 C 5 J ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 88 C, rectangular waveform 100 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 5000 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 1000 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4.5 mH 9 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 3 x V typical J A R Revision: 12-Jun-15 Document Number: 93801 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-100BGQ015HF4 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 50 A 0.36 0.4 T = 25 C J 100 A 0.45 0.52 (1) Forward voltage drop V V FM 50 A 0.27 0.31 T = 125 C J 100 A 0.39 0.45 T = 100 C, V = 12 V 480 700 mA J R T = 125 C, V = 5 V 1 1.2 A J R (1) Maximum reverse leakage current I RM T = 25 C 718 J V = Rated V mA R R T = 100 C 580 870 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 3800 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, R DC operation 0.50 thJC junction to case C/W Maximum thermal resistance, R Mounting surface, smooth and greased 0.30 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 100BGQ015H Revision: 12-Jun-15 Document Number: 93801 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000