VS-100BGQ100 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES 175 C max. operating junction temperature High frequency operation Cathode Anode Low forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability PowerTab Screw mounting only Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS PowerTab package I 100 A F(AV) Material categorization: for definitions of compliance V 100 V R please see www.vishay.com/doc 99912 V at I 0.82 V F F DESCRIPTION I 180 mA at 125 C RM The VS-100BGQ100 Schottky rectifier has been optimized E 9 mJ AS for low reverse leakage at high temperature. T max. 175 C J The proprietary barrier technology allows for reliable Package PowerTab operation up to 175 C junction temperature. Typica l applications are in switching power supplies, converters, Circuit configuration Single reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 100 A I F(AV) T 124 C C V 100 V RRM I t = 5 s sine 6300 A FSM p 100 A (typical) 0.77 V pk V F T 125 C J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL100BGQ100 UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 124 C, rectangular waveform 100 A F(AV) C 5 s sine or 3 s rect. pulse 6300 Following any rated load Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse V applied 800 RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 4.5 mH 9 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Jan-2019 Document Number: 94581 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. 50 A 0.83 0.86 T = 25 C J 100 A 1.01 1.08 (1) Forward voltage drop V V FM 50 A 0.66 0.7 T = 125 C J 100 A 0.77 0.82 T = 25 C 22 300 A J (1) Reverse leakage current I V = Rated V RM R R T = 125 C 14 18 mA J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz) 25 C 1320 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, R DC operation 0.50 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.30 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 100BGQ100 1000 1000 175C 100 150C Tj = 175 C 10 125C 100 100C 1 75C 0.1 50C 10 0.01 25C Tj = 125 C 0.001 Tj = 25 C 1 0.0001 0.0 0.5 1.0 1.5 2.0 0 20 40 60 80 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jan-2019 Document Number: 94581 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R