VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate UL approved file E78996 Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTP please see www.vishay.com/doc 99912 BENEFITS PRIMARY CHARACTERISTICS Lower conduction losses and switching losses FRED Pt AP DIODE, T = 150 C J Higher switching frequency up to 150 kHz V 600 V RRM Optimized for welding, UPS, and SMPS applications I at 80 C 11 A F(DC) PCB solderable terminals V at 25 C at 60 A 2.08 V F Direct mounting to heatsink IGBT, T = 150 C J V 600 V CES V at 25 C at 60 A 1.98 V CE(on) I at 80C 83 A C FRED Pt CHOPPER DIODE, T = 150 C J V 600 V R I at 80 C 17 A F(DC) V at 25 C at 60 A 2.06 V F Speed 30 kHz to 150 kHz Package MTP Circuit configuration Dual forward ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM FRED Pt T = 25 C 17 Maximum continuous forward current C antiparallel I A F(DC) T = 150 C maximum T = 80 C 11 J C diode Maximum power dissipation P T = 25 C 25 W D C Collector to emitter voltage V T = 25 C 600 V CES J Gate to emitter voltage V I max. 250 ns 20 V GE GES T = 25 C 121 Maximum continuous collector current C IGBT I C at V = 15 V, T = 150 C maximum GE J T = 80 C 83 A C Clamped inductive load current I 300 LM Maximum power dissipation P T = 25 C 462 W D C Repetitive peak reverse voltage V 600 V RRM T = 25 C 26 C FRED Pt Maximum continuous forward current I A F chopper diode T = 150 C maximum J T = 80 C 17 C Maximum power dissipation P T = 25 C 56 W D C Maximum operating junction temperature T 150 J C Storage temperature range T -40 to +150 Stg Isolation voltage V V t = 1 s, T = 25 C 3500 V ISOL RMS J Revision: 02-Mar-18 Document Number: 93412 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-100MT060WDF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Blocking voltage BV 0.5 mA 600 - - V RRM AP diode I = 60 A - 2.08 2.43 F Forward voltage drop V V FM I = 60 A, T = 125 C - 2.05 2.3 F J Collector to emitter BV V = 0 V, I = 0.5 mA 600 - - V CES GE C breakdown voltage Temperature coefficient of V / T I = 0.5 mA (25 C to 125 C) - 0.6 - V/C BR(CES) J C breakdown voltage V 15 V, I = 60 A - 1.93 2.29 GE C Collector to emitter voltage V V CE(on) IGBT V = 15 V, l = 60 A, T = 125 C - 2.36 2.80 GE C J Gate threshold voltage V V = V , I = 500 A 2.9 - 6.0 V GE(th) CE GE C V = 0 V, V = 600 V - - 100 A Collector to emitter GE CE I CES leakage current V = 0 V, V = 600 V, T = 125 C - - 2.0 mA GE CE J Gate to emitter leakage I V = 20 V - - 100 nA GES GE I = 60 A - 2.06 2.53 F Forward voltage drop V FM I = 60 A, T = 125 C - 1.83 2.26 V F J FRED Pt chopper Blocking voltage BV 0.5 mA 600 - - RM diode V = 600 V - - 75 A RRM Reverse leakage current I RM V = 600 V, T = 125 C - - 0.5 mA RRM J RECOVERY PARAMETER Peak reverse recovery current I -67 11 A rr I = 60 A F AP diode Reverse recovery time t dI/dt = 200 A/s - 120 160 ns rr V = 200 V R Reverse recovery charge Q - 620 850 nC rr Peak reverse recovery current I -4.5 6.0 A rr I = 60 A F Reverse recovery time t dI/dt = 200 A/s -67 85 ns rr V = 200 V FRED Pt R Reverse recovery charge Q - 130 250 nC rr chopper Peak reverse recovery current I - 9.5 12.0 A rr diode I = 60 A F Reverse recovery time t dI/dt = 200 A/s - 128 165 ns rr V = 200 V, T = 125 C R J Reverse recovery charge Q - 601 900 nC rr SWITCHING CHARACTERISTICS (T = 25 C unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge Q -460 - g I = 60 A C Gate to source charge Q V = 480 V -160 - nC gs CC V = 15 V GE Gate to drain (Miller) charge Q -70 - gd Turn-on switching loss E -0.2 - on Turn-off switching loss E -0.96 - mJ off Total switching loss E -1.16 - tot I = 100 A, V = 360 V, V = 15 V C CC GE Turn-on delay time t -240 - d(on) R = 5 , L = 500 H, T = 25 C g J Rise time t -47 - r ns Turn-off delay time t -240 - d(off) Fall time t -66 - f PFC IGBT Turn-on switching loss E -0.33 - on Turn-off switching loss E -1.45 - mJ off Total switching loss E -1.78 - tot I = 100 A, V = 360 V, V = 15 V C CC GE Turn-on delay time t -246 - d(on) R = 5 , L = 500 H, T = 125 C g J Rise time t -50 - r ns Turn-off delay time t -246 - d(off) Fall time t -71 - f Input capacitance C -9500 - ies V = 0 V GE Output capacitance C V = 30 V -780 - pF oes CC f = 1 MHz Reverse transfer capacitance C -120 - res Revision: 02-Mar-18 Document Number: 93412 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000