VS-10TQ...PbF Series, VS-10TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 10 A
FEATURES
Base
175 C T operation
J
cathode
2
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
1 3
strength and moisture resistance
Cathode Anode
TO-220AC Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
Designed and qualified according to JEDEC-JESD47
Package TO-220AC
Halogen-free according to IEC 61249-2-21 definition
I 10 A
F(AV)
(-N3 only)
V 35 V, 40 V, 45 V
R
DESCRIPTION
V at I 0.49 V
F F
The VS-10TQ... Schottky rectifier series has been optimized
I 15 mA at 125 C
RM
for low reverse leakage at high temperature. The proprietary
T max. 175 C
J
barrier technology allows for reliable operation up to 175 C
Diode variation Single die junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
E 13 mJ
AS
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 10 A
F(AV)
V 35/45 V
RRM
I t = 5 s sine 1050 A
FSM p
V 10 A , T = 125 C 0.49 V
F pk J
T Range - 55 to 175 C
J
VOLTAGE RATINGS
VS- VS- VS- VS- VS- VS-
PARAMETER SYMBOL UNITS
10TQ035PbF 10TQ035-N3 10TQ040PbF 10TQ040-N3 10TQ045PbF 10TQ045-N3
Maximum DC reverse voltage V
R
35 35 40 40 45 45 V
Maximum working peak
V
RWM
reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average forward current
I 50 % duty cycle at T = 151 C, rectangular waveform 10
F(AV) C
See fig. 5
A
Maximum peak one cycle non-repetitive
5 s sine or 3 s rect. pulse Following any rated load 1050
surge current I condition and with rated
FSM
10 ms sine or 6 ms rect. pulse V applied 280
See fig. 7 RRM
Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6.5 mH 13 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current I 2A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 11-Oct-11 Document Number: 94120
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-10TQ...PbF Series, VS-10TQ...-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
10 A 0.57
T = 25 C
J
20 A 0.67
Maximum forward voltage drop
(1)
V V
FM
See fig. 1
10 A 0.49
T = 125 C
J
20 A 0.61
T = 25 C 2
Maximum reverse leakage current J
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 15
J
Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF
T R DC
Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum junction and
T , T - 55 to 175 C
J Stg
storage temperature range
Maximum thermal resistance, DC operation
R 2.0
thJC
junction to case See fig. 4
C/W
Typical thermal resistance,
R Mounting surface, smooth and greased 0.50
thCS
case to heatsink
2g
Approximate weight
0.07 oz.
minimum 6 (5)
kgf cm
Mounting torque
(lbf in)
maximum 12 (10)
10TQ035
Marking device Case style TO-220AC
10TQ045
Revision: 11-Oct-11 Document Number: 94120
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000