X-On Electronics has gained recognition as a prominent supplier of VS-10CWH02FN-M3 rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-10CWH02FN-M3 rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for rectifiers, ensuring timely deliveries around the world.

VS-10CWH02FN-M3 Vishay

VS-10CWH02FN-M3 electronic component of Vishay
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See Product Specifications
Part No.VS-10CWH02FN-M3
Manufacturer: Vishay
Category:Rectifiers
Description: Vishay Rectifiers Freds - D-PAK-e3
Datasheet: VS-10CWH02FN-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.058 ea
Line Total: USD 1.06

Availability - 1575
Ships to you between
Mon. 10 Jun to Wed. 12 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10 - WHS 1


Ships to you between
Tue. 11 Jun to Fri. 14 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9301
10 : USD 0.784
30 : USD 0.7089
100 : USD 0.5983
500 : USD 0.555
1000 : USD 0.5333

1575 - WHS 2


Ships to you between Mon. 10 Jun to Wed. 12 Jun

MOQ : 1
Multiples : 1
1 : USD 1.058
10 : USD 0.8544
100 : USD 0.6762
500 : USD 0.5738
1000 : USD 0.4404
3000 : USD 0.4186
9000 : USD 0.399
24000 : USD 0.3887

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Product
Cnhts
Hts Code
Mxhts
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We are delighted to provide the VS-10CWH02FN-M3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-10CWH02FN-M3 and other electronic components in the Rectifiers category and beyond.

VS-10CWH02FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES Base Hyperfast recovery time common 175 C max. operating junction temperature cathode 2 Output rectification freewheeling Low forward voltage drop reduced Q and soft rr 2 recovery 2 3 1 3 Low leakage current Common 1 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum cathode DPAK (TO-252AA) peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS State of the art hyperfast recovery rectifiers designed with I 2 x 5 A F(AV) optimized performance of forward voltage drop, hyperfast V 200 V R recovery time, and soft recovery. V at I 0.74 V F F The planar structure and the platinum doped life tim e t (typ.) 23 ns rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. Package DPAK (TO-252AA) These devices are intended for use in PFC boost stage in th e Circuit configuration Common cathode AC/DC section of SMPS inverters or as freewheeling diodes . Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 160 C 10 F(AV) C A Non-repetitive peak surge current I T = 25 C 80 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 5 A - 0.90 0.98 F V I = 10 A - 0.98 1.15 F Forward voltage V F I = 5 A, T = 150 C - 0.74 0.84 F J I = 10 A, T = 150 C - 0.84 1.05 F J V = V rated - - 4 R R Reverse leakage current per leg I T = 125 C, V = V rated - - 40 A R J R R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 93263 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10CWH02FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 23 27 F F R Reverse recovery time t T = 25 C -21 - ns rr J T = 125 C - 26 - J I = 5 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.1 - J V = 160 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 41 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg per leg -2.7 3.2 Thermal resistance, junction to case R C/W thJC per device - 1.35 1.6 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 10CWH02FN 100 100 T = 175 C J 10 T = 150 C J T = 175 C J 10 1 T = 125 C J T = 100 C J 0.1 T = 75 C J 1 T = 125 C 0.01 J T = 50 C J T = 25 C 0.001 J T = 25 C J 0.1 0.0001 50 100 150 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 10 0 50 100 150 200 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 11-Apr-18 Document Number: 93263 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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