STPS10H60SFY STMicroelectronics

STPS10H60SFY Datasheet Automotive 60 V low I power Schottky rectifier r Features AEC-Q101 qualified Low leakage current Negligible switching losses Avalanche capability specified 175 C maximum junction temperature V guaranteed from -40 C to 175 C RRM Wettable flanks for automatic visual inspection PPAP capable ECOPACK 2 compliant component Application DC/DC converters Reverse polarity protection Freewheeling diodes Switching diodes Description The STPS10H60SFY power Schottky rectifier has been designed for automotive Product status link applications. STPS10H60SFY Packaged in PSMC (TO-277A), this device provides a very low V in a compact F Product summary package which can withstand high operating junction temperature. Symbol Value I 10 A F(AV) V 60 V RRM T (max.) 175 C j V (typ.) 0.53 V F DS12671 - Rev 1 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STPS10H60SFY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified with 2 anode terminals short-circuited) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 60 V RRM j I Average forward current, = 0.5 T = 140 C 10 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 210 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 145 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Operating junction temperature range -40 to +175 C j 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameters Symbol Parameter Typ. Unit R Junction to case 2.4 C/W th(j-c) For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (anode terminals short-circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 20 A j (1) I Reverse leakage current V = V R RRM R T = 125 C - 2 10 mA j T = 25 C - 0.65 j I = 5 A F T = 125 C - 0.515 0.58 j (2) V Forward voltage drop V F T = 25 C - 0.79 j I = 10 A F T = 125 C - 0.60 0.67 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.49 x I + 0.018 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses in a power diode DS12671 - Rev 1 page 2/11