STPS10L45CT STMicroelectronics

STPS10L45CT/CG/CF/CFP LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS A1 I 2x5 A F(AV) K V 45 V RRM A2 Tj (max) 150C V (max) 0.46 V F K FEATURES AND BENEFITS n LOW FORWARD VOLTAGE DROP MEANING VERY SMALL CONDUCTION LOSSES A2 A2 n LOW SWITCHING LOSSES ALLOWING HIGH A1 K FREQUENCY OPERATION A1 2 D PAK n INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB TO-220FPAB STPS10L45CG STPS10L45CFP Insulating voltage = 2000V DC Capacitance = 12pF n AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high A2 A2 K frequency DC to DC converters. K A1 A1 Packaged in TO-220AB, ISOWATT220AB, ISOWATT220AB 2 TO-220AB TO-220FPAB and D PAK, these devices are STPS10L45CF STPS10L45CT intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 45 V RRM Repetitive peak reverse voltage I 20 A F(RMS) RMS forward current I 5 A F(AV) Average TO-220AB Tc =135C Per diode 2 10 forward current D PAK = 0.5 Per device 5 A ISOWATT220AB Tc =115C Per diode 10 TO-220FPAB = 0.5 Per device I 150 A FSM Surge non repetitive forward current tp = 10 ms Sinusoidal I 1A RRM Repetitive peak reverse current tp=2s square F=1kHz I 2A RSM Non repetitive peak reverse current tp = 100 s square P 2700 W ARM Repetitive peak avalanche power tp = 1s Tj = 25C T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3B 1/7STPS10L45CT/CG/CF/CFP THERMAL RESISTANCES Symbol Parameter Value Unit R C/W th (j-c) Junction to case TO-220AB Per diode 3 2 Total 1.7 D PAK R th (c) Coupling 0.35 R C/W th (j-c) Junction to case Per diode 5 ISOWATT220AB Total 3.8 TO-220FPAB R th (c) Coupling 2.5 When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 0.15 mA R Reverse leakage Tj = 25C V =V R RRM current 45 90 mA Tj = 125C V * 0.53 V F Forward voltage drop Tj = 25CI =5A F 0.36 0.46 Tj = 125C I =5A F 0.67 Tj=25CI =10A F 0.49 0.59 Tj = 125C I =10A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equation : 2 P=0.33xI + 0.026 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current (per diode). temperature (=0.5, per diode). PF(av)(W) IF(av)(A) 6 3.5 = 0.1 = 0.2 = 0.5 Rth(j-a)=Rth(j-c) = 0.05 3.0 5 2.5 4 TO-220AB/DPAK = 1 2.0 3 TO-220FPAB ISOWATT220AB 1.5 2 T T Rth(j-a)=15C/W 1.0 1 0.5 =tp/T tp =tp/T tp Tamb(C) IF(av) (A) 0 0.0 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 2/7