STPS120MF Power Schottky rectifier in flat package Datasheet - production data Description Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite flat, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications Due to the very small size of the package this device fits battery powered equipment (cellular, 67PLWH IODW 2 notebook, PDAs, printers) as well as chargers and PCMCIA cards. Table 1. Device summary Symbol Value Features I 1 A F(AV) Very low profile package: 0.85 mm V 20 V RRM Backward compatible with standard STmite T (max) 150 C j footprint V (typ) 0.36 V F Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance Avalanche capability specified Halogen free molding compound July 2015 DocID14746 Rev 3 1/8 This is information on a product in full production. www.st.comCharacteristics STPS120MF 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 20 V RRM I Forward rms current 2 A F(RMS) I Average forward current, = 0.5, square wave T = 140 C 1 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 100 W ARM j p T Storage temperature range -65 to +150 C stg (2) T Maximum operating junction temperature 150 C j 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 20 C/W th(j-c) (1) R Junction to ambient 250 C/W th(j-a) 1. Mounted with minimum recommended pad size, PC board FR4. Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -1.3 3.9 j V = V R RRM T = 100 C - 275 850 j T = 25 C -0.6 2.0 j (1) I Reverse leakage current V = 10 V A R R T = 100 C 145 450 j T = 25 C 0.4 1.0 j V = 5 V R T = 100 C 105 300 j T = 25 C - 0.44 0.49 j I = 1 A F T = 100 C - 0.36 0.41 j (2) V Forward voltage drop V F T = 25 C - 0.48 0.54 j I = 2 A F T = 100 C - 0.42 0.48 j 1. Pulse test: t = 380 s, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 0.34 x I + 0.07 x I F(AV) F (RMS) 2/8 DocID14746 Rev 3