NSR02F30MX 200 mA, 30 V Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in a spacing saving www.onsemi.com x3DFN 0201 package ideal for space constraint applications. Features Low Forward Voltage Drop 500 mV (Typ.) I = 200 mA F 1 2 Low Reverse Current 20 A (Typ.) V = 30 V R Cathode Anode 200 mA of Continuous Forward Current ESD Rating Human Body Model: Class 2 Machine Model: Class M3 MARKING CDM: Class IV DIAGRAM High Switching Speed PIN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS M Compliant X3DFN2 CASE 152AF Typical Applications J = Specific Device Code LCD and Keypad Backlighting = (Rotated 180) Camera Photo Flash M = Month Code Buck and Boost dcdc Converters Reverse Voltage and Current Protection Clamping and Protection ORDERING INFORMATION Device Package Shipping MAXIMUM RATINGS Rating Symbol Value Unit NSR02F30MXT5G X3DFN 10000 / Tape & (PbFree) Reel Reverse Voltage V 30 V R For information on tape and reel specifications, Forward Current (DC) I 200 mA F including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Forward Surge Current I 2 A FSM Brochure, BRD8011/D. (60 Hz 1 cycle) Repetitive Peak Forward Current I 1 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD 2 4 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 1 NSR02F30MX/D JNSR02F30MX Table 1. THERMAL CHARACTERISTICS Rating Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 695 C/W JA 180 mW Total Power Dissipation TA = 25 C P D Storage Temperature Range T 55 to +125 C stg Junction Temperature T +125 C J 1. Mounted onto a 4 in square FR4 board 100 mm sq. 2 oz. Cu 0.06 thick single sided. Operating to steady state. Table 2. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Test Conditions Symbol Min Typ Max Unit Reverse Leakage V = 10 V I 15 A R R Reverse Leakage V = 30 V I 20 50 A R R Forward Voltage I = 1 mA V 155 mV F F Forward Voltage I = 10 mA V 250 290 mV F F Forward Voltage I = 100 mA V 375 490 mV F F Forward Voltage I = 200 mA V 500 600 mV F F Total Capacitance V = 1.0 V, f = 1.0 MHz C 6 8 pF R T Reverse Recovery Time I = I = 10 mA, I = 1.0 mA, Figure 2 t 2.4 3 ns F R R(REC) rr Figure 1. Recovery Time Equivalent Test Circuit Figure 2. Peak Forward Recover Voltage Definition www.onsemi.com 2