NSR02L30 Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon Nolead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active www.onsemi.com silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal 30 V SCHOTTKY resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. BARRIER DIODE Features Very Low Forward Voltage Drop 400 mV 10 mA 1 2 CATHODE ANODE Low Reverse Current 0.20 A 10 V VR 200 mA of Continuous Forward Current Power Dissipation of 312 mW with Minimum Trace ESD Rating Human Body Model: Class 3B ESD Rating Machine Model: Class C DSN2 Very High Switching Speed (0201) CASE 152AA Low Capacitance CT = 7 pF This is a HalideFree Device This is a PbFree Device MARKING DIAGRAMS Typical Applications PIN 1 LCD and Keypad Backlighting I230 Camera Photo Flash YYY Buck and Boost dcdc Converters Reverse Voltage and Current Protection I230 = Specific Device Code YYY = Year Code Clamping & Protection PIN 1 Markets Mobile Handsets AM MP3 Players Digital Camera and Camcorders A = Specific Device Code M = Date Code Notebook PCs & PDAs GPS MAXIMUM RATINGS ORDERING INFORMATION Rating Symbol Value Unit Device Package Shipping Reverse Voltage V 30 V R NSR02L30NXT5G DSN2 5000 / Tape & Reel Forward Current (DC) I 200 mA F (PbFree) Forward Surge Current I A FSM For information on tape and reel specifications, (60 Hz 1 cycle) 4.0 including part orientation and tape sizes, please ESD Rating: Human Body Model ESD >8.0 kV refer to our Tape and Reel Packaging Specifications Machine Model >400 V Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: May, 2017 Rev. 3 NSR02L30/DNSR02L30 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Total Power Dissipation T = 25C P 312 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 170 C/W JA Total Power Dissipation T = 25C P 735 mW A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 R (V = 30 V) 3.0 R Forward Voltage V V F (I = 10 mA) 0.40 F (I = 200 mA) 0.58 F Total Capacitance 7.0 pF CT (V = 5.0 V, f = 1 MHz) R www.onsemi.com 2