Schottky Barrier Diodes NSR0320MW2T1G, NSVR0320MW2T1G These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. www.onsemi.com Features Low Forward Voltage 0.24 Volts (Typ) I = 10 mAdc F High Current Capability HIGH CURRENT ESD Rating: SCHOTTKY BARRIER DIODE Human Body Model: CLASS 3B Machine Model: C NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOD323 These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 477 Compliant* STYLE 1 MAXIMUM RATINGS (T = 125C unless otherwise noted) 1 2 J CATHODE ANODE Rating Symbol Value Unit Reverse Voltage V 20 Vdc R MARKING DIAGRAM Peak Revese Voltage V 23 V RM Forward Power Dissipation P F T = 25C 200 mW A RD M Derate above 25C 2.0 mW/C Forward Current (DC) I A F Continuous 1 RD = Specific Device Code Forward Current I A FSM M = Date Code t = 8.3 ms Half Sinewave 5 = PbFree Package Thermal Resistance, JunctiontoAmbient R 500 C/W JA (Note: Microdot may be in either location) 2 175 mm , 1 oz. Cu, FR4 Thermal Resistance, JunctiontoLead R 322 C/W JL 2 175 mm , 1 oz. Cu, FR4 ORDERING INFORMATION Junction Temperature Range T 55 to C J +125 Device Package Shipping Storage Temperature Range T 55 to C NSR0320MW2T1G SOD323 3,000 / stg +150 (PbFree) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the NSVR0320MW2T1G SOD323 3,000 / device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 Publication Order Number: February, 2020 Rev. 7 NSR0320MW2T1/DNSR0320MW2T1G, NSVR0320MW2T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Total Capacitance (V = 5.0 V, f = 1.0 MHz) C 25 29 pF R T Reverse Leakage I A R (V = 15 V) 10 50 R (V = 2.0 V 85C) 200 R (V = 15.0 V 85C) 450 R Forward Voltage V V F (I = 10 mA) 0.24 0.27 F (I = 100 mA) 0.30 0.35 F (I = 900 mA) 0.45 0.50 F 1000 10000 150C 125C 1000 100 150C 85C 100 10 85C 10 55C 25C 25C 45C 1 1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 100 80 60 40 20 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 IF, FORWARD CURRENT (mA) CT, CAPACITANCE (pF) IR, REVERSE CURRENT ( A)