Schottky Barrier Diode NSR0530P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0530P2 in a SOD 923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 30 V SCHOTTKY Very Low Forward Voltage Drop 370 mV 100 mA BARRIER DIODE Low Reverse Current 1.4 A 10 V VR 500 mA of Continuous Forward Current Power Dissipation of 190 mW with Minimum Trace 1 2 Very High Switching Speed CATHODE ANODE Low Capacitance CT = 10 pF NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable 2 DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 Compliant M SOD923 Typical Applications CASE 514AB 12 LCD and Keypad Backlighting Camera Photo Flash D = Specific Device Code M = Month Code Buck and Boost dcdc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Markets Device Package Shipping Mobile Handsets NSR0530P2T5G SOD923 8000 / Tape & MP3 Players (PbFree) Reel Digital Camera and Camcorders NSVR0530P2T5G SOD923 8000 / Tape & (PbFree) Reel Notebook PCs & PDAs GPS For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit Reverse Voltage V 30 V R Forward Current (DC) I 500 mA F ESD Rating: Human Body Model ESD Class 3B Machine Model Class C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2019 Rev. 2 NSR0530P2/D DNSR0530P2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 190 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 570 mW A D Junction and Storage Temperature Range T , T 55 to +125 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 1.4 10 R (V = 30 V) 24 200 R Forward Voltage (I = 10 mA) V 0.28 0.37 V F F (I = 100 mA) 0.37 0.46 F (I = 500 mA) 0.52 0.62 F Total Capacitance 10 pF CT (V = 1.0 V, f = 1 MHz) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 10,000 1,000,000 100,000 1000 125C 10,000 100 85C 1000 10 100 25C 125C 10 1 40C 1 0.1 0.1 85C 0.01 0.01 25C 40C 0.001 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 20 18 T = 25C A 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT ( A) r