NSR0340P2 40 V Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0340P2 in a SOD923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 40 V SCHOTTKY Very Low Forward Voltage Drop 420 mV 100 mA BARRIER DIODE Low Reverse Current 0.6 A 10 V Continuous Forward Current 200 mA Power Dissipation with Minimum Trace 190 mW Very High Switching Speed 3.0 ns 10 mA 1 2 CATHODE ANODE Low Capacitance 4 pF 5.0 V This is a PbFree Device MARKING Typical Applications 2 DIAGRAM LCD and Keypad Backlighting Camera Photo Flash 1 Buck and Boost dcdc Converters M SOD923 CASE 514AB Reverse Voltage and Current Protection 12 Clamping & Protection R = Specific Device Code Markets M = Month Code Mobile Handsets MP3 Players ORDERING INFORMATION Digital Camera and Camcorders Notebook PCs & PDAs Device Package Shipping GPS NSR0340P2T5G SOD923 2 mm Pitch (PbFree) 8000 / Tape & Reel MAXIMUM RATINGS For information on tape and reel specifications, including part orientation and tape sizes, please Rating Symbol Value Unit refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Reverse Voltage V 40 V R Forward Current (DC) I 200 mA F NonRepetitive Peak Forward Surge I 1.0 A FSM Current ESD Rating: Human Body Model ESD Class 2 Machine Model Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: March, 2017 Rev. 1 NSR0340P2/D RNSR0340P2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 190 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 570 mW A D Junction and Storage Temperature Range T , T 55 to +125 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.6 5.0 R (V = 40 V) 4.0 20 R Forward Voltage V mV F (I = 10 mA) 290 320 F (I = 100 mA) 420 460 F (I = 200 mA) 520 560 F Total Capacitance pF CT (V = 5.0 V, f = 1 MHz) 4.0 R Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) 3.0 F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + t t r p 0.1 F 0 V 10% I 90% F 750 H V R 0.1 F 50 Output Pulse Generator Pulse Output Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. I is measured at 1 mA. Typically 0.1 X I or 0.25 X I . R(REC) RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2