Trench-based Schottky Diode, 500 mA, 30 V NSR05301MX4 These Schottky diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micropackaging www.onsemi.com ideal for space constrained applications. Features 1 2 Smallest Package Available (01005) 0.445mm x 0.24mm CATHODE ANODE 500 mA of Continuous Forward Current Low Forward Voltage Drop 430 mV (Typical) I = 200 mA F Low Reverse Current 25 A (Typical) V = 30 V MARKING R DIAGRAM Low Reverse Recovery Time 9 ns Typical Low Capacitance 19 pF Typical X4DFN2 DM CASE 718AA Typical Applications Mobile and Wearable Devices D = Specific Device Code M = Date Code LED Boost Converters Buck and Boost dcdc Converters Reverse Voltage and Current Protection ORDERING INFORMATION Clamping & Protection Device Package Shipping NSR05301MX4T5G X4DFN2 10000 / MAXIMUM RATINGS (PbFree) Tape & Reel Rating Symbol Value Unit For information on tape and reel specifications, Forward Current (DC) I 500 mA F including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Reverse Voltage V 30 V R Brochure, BRD8011/D. Repetitive Peak Forward Current I 1.0 A FRM (Pulse Wave = 1 sec, Duty Cycle = 66%) ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: October, 2020 Rev. 1 NSR05301/DNSR05301MX4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 614.9 C/W JA Total Power Dissipation T = 25C P 203 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 239.4 C/W JA Total Power Dissipation T = 25C P 522 mW A D Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C STG Lead Solder Temperature Maximum (10 seconds) T 260 C L 2 2 1. Mounted onto a 4 in FR4 board 10 mm 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2 2 2. Mounted onto a 4 in FR4 board 2 cm 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 1000 D = 0.5 0.2 100 0.1 0.05 10 0.02 0.01 1 Single Pulse 0.1 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 1. Thermal Response (Note 1) 1000 D = 0.5 0.2 100 0.1 0.05 10 0.02 0.01 1 Single Pulse 0.1 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (s) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 R(t), TRANSIENT THERMAL RESPONSE R(t), TRANSIENT THERMAL RESPONSE (C/W) (C/W)