NSR02F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. The DSN2 (Dual Silicon Nolead) package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100% utilization of the package area for active www.onsemi.com silicon, offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal 30 V SCHOTTKY resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. BARRIER DIODE Features 1 2 Very Low Forward Voltage Drop 370 mV 10 mA CATHODE ANODE Low Reverse Current 7.0 A 10 V VR 200 mA of Continuous Forward Current ESD Rating Human Body Model: Class 3B MARKING DIAGRAM ESD Rating Machine Model: Class C Very High Switching Speed PIN 1 DSN2 Low Capacitance CT = 7 pF (0201) V230 CASE 152AA YYY These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V230 = Specific Device Code Typical Applications YYY = Year Code LCD and Keypad Backlighting PIN 1 Camera Photo Flash QM Buck and Boost dcdc Converters Reverse Voltage and Current Protection Q = Specific Device Code Clamping & Protection M = Month Code Markets Mobile Handsets ORDERING INFORMATION MP3 Players Digital Camera and Camcorders Device Package Shipping Notebook PCs & PDAs NSR02F30NXT5G DSN2 5000 / Tape & Reel GPS (PbFree) For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please Rating Symbol Value Unit refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Reverse Voltage V 30 V R Forward Current (DC) I 200 mA F Forward Surge Current I A FSM (60 Hz 1 cycle) 4.0 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: June, 2017 Rev. 3 NSR02F30/DNSR02F30NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 400 C/W JA Total Power Dissipation T = 25C P 312 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 170 C/W JA Total Power Dissipation T = 25C P 735 mW A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +125 C J 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 7.0 R (V = 30 V) 50 R Forward Voltage V V F (I = 10 mA) 0.37 F (I = 200 mA) 0.55 F Total Capacitance 7.0 pF CT (V = 5.0 V, f = 1 MHz) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2