NSR0140P2T5G ON Semiconductor

Schottky Barrier Diode NSR0140P2 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features Extremely Fast Switching Speed 40 V SCHOTTKY Extremely Low Forward Voltage 0.28 V (Typ) I = 1.0 mA F BARRIER DIODE Low Reverse Current LeadFree Plating This is a PbFree Device 1 2 CATHODE ANODE MARKING 2 DIAGRAM MAXIMUM RATINGS 1 Rating Symbol Value Unit M M SOD923 Repetitive Peak Reverse Voltage V 40 V RM CASE 514AB 12 Continuous Reverse Voltage (DC) V 30 V R Continuous Forward Current (DC) I 70 mA F M = Specific Device Code* (Character is rotated 270 clockwise) NonRepetitive Peak Forward Surge Current I 500 mA FSM M = Month Code ESD Rating: Class 1C per Human Body Model Class A per Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS NSR0140P2T5G SOD923 8000/Tape & Reel Characteristic Symbol Max Unit (PbFree) Total Device Dissipation FR5 Board, P 100 mW D For information on tape and reel specifications, (Note 1) T = 25C A including part orientation and tape sizes, please Derate above 25C 1.0 mW/C refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Thermal Resistance, R 1000 C/W JA JunctiontoAmbient Junction and Storage T , T 55 to +125 C J stg Temperature Range 1. FR5 Minimum Pad. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: May, 2021 Rev. 5 NSR0140P2/DNSR0140P2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 V (BR)R (I = 10 A) R Total Capacitance C 2.0 2.5 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 300 500 nA R (V = 30 V) R Forward Voltage V 0.28 0.35 V F (I = 1.0 mA) F 10 1000 T = 150C 100 A 125C 10 85C 1.0 1.0 0.1 25C 1 50C 0.01 1 25C 85C 25C - 40C - 55C 0.1 0.001 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0 5 10 15 20 25 30 35 V , REVERSE VOLTAGE (VOLTS) R V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , CAPACITANCE (pF) T I , REVERSE CURRENT (A) R