NSR0170HT1G ON Semiconductor

NSR0170HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0170H in a SOD323 small footprint package enables designers to meet the challenging task of achieving higher efficiency designs NSR0170HT1G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 680 C/W JA Total Power Dissipation T = 25C P 180 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 440 C/W JA Total Power Dissipation T = 25C P 280 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I R (V = 50 V) 25 90 nA R (V = 70 V) 3.0 A R Forward Voltage V mV F (I = 1.0 mA) 340 390 F (I = 10 mA) 560 640 F (I = 15 mA) 650 730 F Total Capacitance 2.0 pF CT (V = 0 V, f = 1 MHz) R 100 1000 150C 10 100 125C 150C 1 85C 10 0.1 125C 1 25C 0.01 85C 0.1 0.001 25C 40C 0.01 0.0001 40C 0.001 0.00001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 2.5 T = 25C A 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 70 80 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance