NSR01F30MX Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features Very Low Forward Voltage Drop 350 mV 10 mA www.onsemi.com Low Reverse Current 5 A 10 V 100 mA of Continuous Forward Current 30 V SCHOTTKY ESD Rating Human Body Model: Class 3B BARRIER DIODE ESD Rating Machine Model: Class C These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 CATHODE ANODE Typical Applications LCD and Keypad Backlighting Camera Photo Flash MARKING DIAGRAM Buck and Boost dcdc Converters PIN 1 Reverse Voltage and Current Protection X3DFN2 CASE 152AF Clamping & Protection M Markets F = Specific Device Code Mobile Handsets (Rotated 180) MP3 Players M = Date Code Digital Camera and Camcorders Notebook PCs & PDAs ORDERING INFORMATION GPS Device Package Shipping MAXIMUM RATINGS NSR01F30MXT5G X3DFN2 10000 / (PbFree) Tape & Reel Rating Symbol Value Unit For information on tape and reel specifications, Reverse Voltage V 30 V R including part orientation and tape sizes, please Forward Current (DC) I 100 mA refer to our Tape and Reel Packaging Specifications F Brochure, BRD8011/D. Forward Surge Current I A FSM (60 Hz 1 cycle) 2.0 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 4 NSR01F30MX/D FNSR01F30MX THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 695 C/W JA Total Power Dissipation T = 25C P mW A D 180 Storage Temperature Range T 40 +125 C stg Junction Temperature Range T 40 +125 C J 1. Mounted onto a 4 in square FR4 board 100 mm sq. 2 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 5 R (V = 30 V) 50 R Forward Voltage V V F (I = 10 mA) 0.35 F (I = 100 mA) 0.60 F Total Capacitance 0.90 pF CT (V = 10 V, f = 1 MHz) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2