NSR01L30MX Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current. Features Very Low Forward Voltage Drop 350 mV 1 mA www.onsemi.com Low Reverse Current 0.2 A 10 V 100 mA of Continuous Forward Current 30 V SCHOTTKY ESD Rating Human Body Model: Class 3B BARRIER DIODE ESD Rating Machine Model: Class C This is a HalideFree Device This is a PbFree Device 1 2 CATHODE ANODE Typical Applications LCD and Keypad Backlighting MARKING Camera Photo Flash DIAGRAM Buck and Boost dcdc Converters PIN 1 Reverse Voltage and Current Protection X3DFN2 CASE 152AF M Clamping & Protection Markets L = Specific Device Code Mobile Handsets (Rotated 180) M = Date Code MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs ORDERING INFORMATION GPS Device Package Shipping MAXIMUM RATINGS NSR01L30MXT5G X3DFN2 10000 / Rating Symbol Value Unit (PbFree) Tape & Reel Reverse Voltage V 30 V R For information on tape and reel specifications, including part orientation and tape sizes, please Forward Current (DC) I 100 mA F refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Forward Surge Current I A FSM (60 Hz 1 cycle) 2.0 ESD Rating: Human Body Model ESD >8.0 kV Machine Model >400 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2016 Rev. 2 NSR01L30MX/D LNSR01L30MX THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 695 C/W JA Total Power Dissipation T = 25C P mW A D 180 Storage Temperature Range T 55 to +150 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 100 mm sq. 2 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 R (V = 30 V) 0.5 R Forward Voltage V V F (I = 1 mA) 0.35 F (I = 10 mA) 0.46 F Total Capacitance 0.8 pF CT (V = 5.0 V, f = 1 MHz) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2