NSR0240V2T1G ON Semiconductor

NSR0240V2, NSVR0240V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0240V2 in a SOD523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 40 VOLT SCHOTTKY Very Low Forward Voltage Drop 480 mV 100 mA BARRIER DIODE Low Reverse Current 0.2 A 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 200 mW with Minimum Trace Very High Switching Speed SOD523 Low Capacitance CT = 4 pF CASE 502 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 2 Qualified and PPAP Capable CATHODE ANODE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Typical Applications LCD and Keypad Backlighting AC M Camera Photo Flash 12 Buck and Boost dcdc Converters Reverse Voltage and Current Protection AC = Device Code Clamping & Protection M = Date Code* = PbFree Package Markets (Note: Microdot may be in either location) Mobile Handsets *Date Code orientation position may vary depending MP3 Players upon manufacturing location. Digital Camera and Camcorders Notebook PCs & PDAs ORDERING INFORMATION GPS Device Package Shipping MAXIMUM RATINGS NSR0240V2T1G SOD523 3,000 / (PbFree) Tape & Reel Rating Symbol Value Unit NSVR0240V2T1G SOD523 3,000 / Reverse Voltage V 40 Vdc R (PbFree) Tape & Reel Forward Continuous Current (DC) I 250 mA F NSR0240V2T5G SOD523 8,000 / NonRepetitive Peak Forward Surge Current I 2.0 A FSM (PbFree) Tape & Reel ESD Rating: Human Body Model ESD Class 2 NSVR0240V2T5G SOD523 8,000 / Machine Model Class A (PbFree) Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: August, 2018 Rev. 4 NSR0240V2T1/DNSR0240V2, NSVR0240V2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 600 C/W JA Total Power Dissipation T = 25C P 200 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 300 C/W JA Total Power Dissipation T = 25C P 400 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.55 R (V = 25 V) 0.2 2.0 R (V = 40 V) 0.5 10 R Forward Voltage V mV F (I = 10 mA) 345 390 F (I = 100 mA) 485 550 F (I = 200 mA) 580 700 F Total Capacitance pF CT (V = 5.0 V, f = 1 MHz) 4.0 R Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) 3.0 F R R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source t t + r p 0.1 F 0 V 10% I 90% F 750 H V R 0.1 F Pulse Generator 50 Output Output Pulse Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. I is measured at 1 mA. Typically 0.1 X I or 0.25 X I . R(REC) RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2