Schottky Barrier Diode NSR0170P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0170P2 in a SOD 923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting www.onsemi.com reduced space requirements. Features 70 V SCHOTTKY Very Low Forward Voltage Drop 560 mV 10 mA BARRIER DIODE Low Reverse Current 25 nA 50 V VR 70 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace 1 2 Very High Switching Speed CATHODE ANODE Low Capacitance CT = 2 pF NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 MARKING Qualified and PPAP Capable 2 DIAGRAM These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 M SOD923 Typical Applications CASE 514AB 12 LCD and Keypad Backlighting Camera Photo Flash Q = Specific Device Code Buck and Boost dcdc Converters M = Month Code Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Markets Device Package Shipping Mobile Handsets NSR0170P2T5G SOD923 2 mm Pitch MP3 Players (PbFree) 8000/Tape & Reel Digital Camera and Camcorders NSVR0170P2T5G SOD923 2 mm Pitch Notebook PCs & PDAs (PbFree) 8000/Tape & Reel GPS For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Symbol Value Unit Reverse Voltage V 70 V R Forward Current (DC) I 70 mA F ESD Rating: Human Body Model ESD Class 2 Machine Model Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: September, 2019 Rev. 2 NSR0170P2/D QNSR0170P2 THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 520 C/W JA Total Power Dissipation T = 25C P 240 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 175 C/W JA Total Power Dissipation T = 25C P 710 mW A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I R (V = 50 V) 25 90 nA R (V = 70 V) 3.0 A R Forward Voltage V V F (I = 1.0 mA) 0.34 0.39 F (I = 10 mA) 0.56 0.64 F (I = 15 mA) 0.65 0.73 F Total Capacitance 2.0 pF CT (V = 0 V, f = 1 MHz) R 100 1000 150C 10 100 125C 150C 1 85C 10 0.1 125C 1 25C 0.01 85C 0.1 0.001 25C 40C 0.01 0.0001 40C 0.001 0.00001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 10 20 30 40 50 60 70 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 1. Forward Voltage Figure 2. Leakage Current 2.5 T = 25C A 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 70 80 V , REVERSE VOLTAGE (V) R Figure 3. Total Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , TOTAL CAPACITANCE (pF) T I , REVERSE CURRENT ( A) r