SS22 R4 Taiwan Semiconductor

SS22 - SS215 Taiwan Semiconductor 2A, 20V - 150V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 2 A F(AV) Guard ring for over-voltage protection V 20 - 150 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and I 50 A FSM in accordance to WEEE 2002/96/EC Package DO-214AA (SMB) Halogen-free according to IEC 61249-2-21 Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Part no. with suffix H means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.093 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL SS22 SS23 SS24 SS25 SS26 SS29 SS210 SS215 UNIT Marking code on the device SS22 SS23 SS24 SS25 SS26 SS29 SS210 SS215 Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 V RRM Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 V DC Forward current I 2 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed on I 50 A FSM rated load per diode Critical rate of rise of off-state voltage dV/dt 10000 V/s Junction temperature T - 55 to +125 - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:L1705 SS22 - SS215 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction-to-lead thermal resistance R 24 C/W JL Junction-to-ambient thermal resistance R 70 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT SS22 - 0.50 SS23 V SS24 SS25 (1) - 0.70 V Forward voltage per diode I = 2A,T = 25C V F J F SS26 SS29 - 0.85 V SS210 - 0.95 V SS215 SS22 - 0.40 V SS23 SS24 SS25 (1) Forward voltage per diode I = 2A,T = 100C V - 0.65 V F J F SS26 SS29 - 0.70 V SS210 - 0.80 V SS215 SS22 SS23 - 0.4 SS24 mA SS25 Reverse current rated V per R T = 25C I J R (2) SS26 diode SS29 - 0.1 mA SS210 SS215 SS22 - 10 mA SS23 SS24 Reverse current rated V per SS25 R T = 100C - 5 mA I J (2) R diode SS26 SS29 - - mA SS210 SS215 2 Version:L1705