X-On Electronics has gained recognition as a prominent supplier of TSM033NA04LCR MOSFETs across the USA, India, Europe, Australia, and various other global locations. TSM033NA04LCR MOSFETs are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TSM033NA04LCR Taiwan Semiconductor

TSM033NA04LCR electronic component of Taiwan Semiconductor
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Part No.TSM033NA04LCR
Manufacturer: Taiwan Semiconductor
Category: MOSFETs
Description: MOSFET Power MOSFET, N-CHL, 40V, 141A, 3.3mOhm
Datasheet: TSM033NA04LCR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.8177 ea
Line Total: USD 4088.5 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 5000
Multiples : 5000
5000 : USD 0.8177
10000 : USD 0.7988

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TSM033NA04LCR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TSM033NA04LCR and other electronic components in the MOSFETs category and beyond.

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TSM033NA04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 141A, 3.3m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Logic level V 40 V DS Low gate charge for fast power switching R V = 10V 3.3 GS DS(on) 100% UIS and R tested g m Compliant to RoHS directive 2011/65/EU and in (max) V = 4.5V 4.4 GS accordance to WEEE 2002/96/EC Q 23 nC g Halogen-free according to IEC 61249-2-21 APPLICATIONS BLDC Motor Control Battery Power Management DC-DC converter Secondary Synchronous Rectification PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T = 25C 141 C (Note 1) Continuous Drain Current I A D T = 25C 20 A Pulsed Drain Current I 564 A DM (Note 2) Single Pulse Avalanche Current I 44 A AS (Note 2) Single Pulse Avalanche Energy E 290 mJ AS T = 25C 125 C Total Power Dissipation P W D T = 125C 25 C T = 25C 2.6 A Total Power Dissipation P W D T = 125C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: B1611 Not Recommended TSM033NA04LCR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 40 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 1.7 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 40V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 40V DSS GS DS -- -- 100 T = 125C J V = 10V, I = 20A -- 2.3 3.3 Drain-Source On-State Resistance GS D R m DS(on) (Note 3) V = 4.5V, I = 20A -- 3.3 4.4 GS D (Note 3) V = 5V, I = 20A Forward Transconductance g -- 56 -- S DS D fs (Note 4) Dynamic V = 10V, V = 20V, GS DS Total Gate Charge Q -- 47 -- g I = 20A D Total Gate Charge Q -- 23 -- g nC V = 4.5V, V = 20V, GS DS Gate-Source Charge Q -- 10 -- gs I = 20A D Gate-Drain Charge Q -- 8 -- gd Input Capacitance C -- 3130 -- iss V = 0V, V = 20V GS DS Output Capacitance C -- 670 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 137 -- rss Gate Resistance f = 1.0MHz R 0.5 1.7 3.4 g (Note 4) Switching Turn-On Delay Time t -- 25.1 -- d(on) Turn-On Rise Time t -- 15.2 -- r V = 10V, V = 20V, GS DS ns Turn-Off Delay Time I = 13A, R = 10, t -- 80 -- D G d(off) Turn-Off Fall Time t -- 11.8 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1.2 V V = 0V, I = 20A SD GS S Reverse Recovery Time t -- 42 -- ns rr I = 20A , S Reverse Recovery Charge Q -- 63 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 30V, R = 25, I = 44A, Starting T = 25C GS DS G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM033NA04LCR RLG PDFN56 2,500pcs / 13 Reel 2 Version: B1611 Not Recommended

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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