TSM045NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 108A, 4.5m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 30 V DS 100% UIS and R tested g R V = 10V 4.5 GS DS(on) Compliant to RoHS directive 2011/65/EU and in m accordance to WEEE 2002/96/EC (max) V = 4.5V 6.3 GS Halogen-free according to IEC 61249-2-21 Q 9 nC g APPLICATIONS DC-DC Converters Battery Power Management ORing FET/Load Switching PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T = 25C 108 C (Note 1) Continuous Drain Current I A D T = 25C 18 A Pulsed Drain Current I 432 A DM (Note 2) Single Pulse Avalanche Current I 26 A AS (Note 2) Single Pulse Avalanche Energy E 104 mJ AS T = 25C 89 C Total Power Dissipation P W D T = 125C 17.8 C T = 25C 2.6 A Total Power Dissipation P W D T = 125C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 1.4 C/W JC Junction to Ambient Thermal Resistance R 48 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: B1610 Not Recommended TSM045NA03CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1.2 2 2.5 GS DS D GS(TH) V Gate-Source Leakage Current V = 20V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 30V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 30V DSS GS DS -- -- 100 T = 125C J Drain-Source On-State Resistance V = 10V, I = 18A -- 3.6 4.5 GS D R m DS(on) (Note 3) V = 4.5V, I = 18A -- 5.5 6.3 GS D (Note 3) V = 5V, I = 18A Forward Transconductance g -- 47 -- S DS D fs (Note 4) Dynamic V = 10V, V = 15V, GS DS Total Gate Charge Q -- 19 -- g I = 18A D Total Gate Charge Q -- 9 -- g nC V = 4.5V, V = 15V, GS DS Gate-Source Charge Q -- 4 -- gs I = 18A D Gate-Drain Charge Q -- 3.7 -- gd Input Capacitance C -- 1194 -- iss V = 0V, V = 15V GS DS Output Capacitance C -- 421 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 97 -- rss Gate Resistance f = 1.0MHz R 0.4 1.2 2.4 g (Note 4) Switching Turn-On Delay Time t -- 5.4 -- d(on) Turn-On Rise Time t -- 2.2 -- r V = 10V, V = 15V, GS DS ns Turn-Off Delay Time I = 18A, R = 2, t -- 12.6 -- D G d(off) Turn-Off Fall Time t -- 2 -- f Source-Drain Diode (Note 3) Forward Voltage V -- -- 1.2 V V = 0V, I = 18A SD GS S Reverse Recovery Time t -- 23 -- ns rr I = 18A , S Reverse Recovery Charge Q -- 17 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. L = 0.3mH, V = 10V, V = 50V, R = 25, I = 26A, Starting T = 25C GS DD G AS J 3. Pulse test: Pulse Width 300s, duty cycle 2%. 4. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM045NA03CR RLG PDFN56 2,500pcs / 13 Reel 2 Version: B1610 Not Recommended