X-On Electronics has gained recognition as a prominent supplier of VS-4EVH01-M3/I Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-4EVH01-M3/I Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-4EVH01-M3/I Vishay

VS-4EVH01-M3/I electronic component of Vishay
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Part No.VS-4EVH01-M3/I
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers 100V 4A SlimDPAK Fred
Datasheet: VS-4EVH01-M3/I Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1297 ea
Line Total: USD 0.13 
Availability - 4360
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4360
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1297
10 : USD 0.1278
25 : USD 0.1258
50 : USD 0.1239
100 : USD 0.122
250 : USD 0.1201
500 : USD 0.1182
1000 : USD 0.1162
3000 : USD 0.1143

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-4EVH01-M3/I from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-4EVH01-M3/I and other electronic components in the Rectifiers category and beyond.

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333 3 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES eSMP Series Heatsink Hyperfast recovery time k 175 C max. operating junction temperature Low forward voltage drop reduced Q and sof t kk rr recovery Low leakage current 11 2 Very low profile - typical height of 1.3 mm 1 Pin 1 Pin 2 22 Ideal for automated placement Polyimide passivation for high reliability standard SlimDPAK (TO-252AE) Meets MSL level 1, per J-STD-020, LF maximum peak LINKS TO ADDITIONAL RESOURCES of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance 3D Models please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyper fast recovery rectifiers with optimized PRIMARY CHARACTERISTICS performance of forward voltage drop and hyper fast I 4 A F(AV) recovery time. V 100 V R The planar structure and the platinum doped life tim e V at I 0.71 V F F control guarantee the best overall performance, t (typ.) 16 ns rr ruggedness, and reliability characteristics. T max. 175 C J These devices are intended for use in PFC boost stage in th e Package SlimDPAK (TO-252AE) AC/DC section of SMPS inverters, or as freewheelin g diodes. Their extremely optimized stored charge and low Circuit configuration Single recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM Average rectified forward current I T = 167 C 4 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 100 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 4 A - 0.88 1.0 V F Forward voltage V F I = 4 A, T = 150 C - 0.71 0.80 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance C V = 100 V - 17 - pF T R Revision: 11-Jan-2021 Document Number: 96100 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-4EVH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -20 - J T = 125 C - 30 - J I = 4 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range (1)(2) Thermal resistance, junction to ambient R -7390C/W thJA (3) Thermal resistance, junction to mount R -2.1 2.5 C/W thJM Marking device Case style SlimDPAK (TO-252AE) 4EVH01 Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 125 C 10 T = 175 C 1 J T = -40 C J 100 C 0.1 75 C 1 0.01 50 C T = 150 C J 0.001 T = 125 C J 25 C T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Jan-2021 Document Number: 96100 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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