333 3 VS-4EVH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 4 A FRED Pt FEATURES eSMP Series Heatsink Hyperfast recovery time k 175 C max. operating junction temperature Low forward voltage drop reduced Q and sof t kk rr recovery Low leakage current 11 2 Very low profile - typical height of 1.3 mm 1 Pin 1 Pin 2 22 Ideal for automated placement Polyimide passivation for high reliability standard SlimDPAK (TO-252AE) Meets MSL level 1, per J-STD-020, LF maximum peak LINKS TO ADDITIONAL RESOURCES of 260 C Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance 3D Models please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS State of the art hyper fast recovery rectifiers with optimized PRIMARY CHARACTERISTICS performance of forward voltage drop and hyper fast I 4 A F(AV) recovery time. V 100 V R The planar structure and the platinum doped life tim e V at I 0.71 V F F control guarantee the best overall performance, t (typ.) 16 ns rr ruggedness, and reliability characteristics. T max. 175 C J These devices are intended for use in PFC boost stage in th e Package SlimDPAK (TO-252AE) AC/DC section of SMPS inverters, or as freewheelin g diodes. Their extremely optimized stored charge and low Circuit configuration Single recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM Average rectified forward current I T = 167 C 4 F(AV) C A Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 100 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 4 A - 0.88 1.0 V F Forward voltage V F I = 4 A, T = 150 C - 0.71 0.80 F J V = V rated - - 3 R R Reverse leakage current I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance C V = 100 V - 17 - pF T R Revision: 11-Jan-2021 Document Number: 96100 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-4EVH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -20 - J T = 125 C - 30 - J I = 4 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -55 - 175 C J Stg range (1)(2) Thermal resistance, junction to ambient R -7390C/W thJA (3) Thermal resistance, junction to mount R -2.1 2.5 C/W thJM Marking device Case style SlimDPAK (TO-252AE) 4EVH01 Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 125 C 10 T = 175 C 1 J T = -40 C J 100 C 0.1 75 C 1 0.01 50 C T = 150 C J 0.001 T = 125 C J 25 C T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Jan-2021 Document Number: 96100 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R
