VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp Speed IGBT), 114 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS BENEFITS V 600 V CES Optimized for welding, UPS and SMPS applications V typical at V = 15 V 2.3 V CE(on) GE I at T = 25 C 114 A Low EMI, requires less snubbing C C Speed 30 kHz to 100 kHz Direct mounting to heatsink Package MTP PCB solderable terminals Circuit configuration Half bridge Very low stray inductance design for high speed operation ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 114 C Continuous collector current I C T = 109 C 50 C Pulsed collector current I 350 CM A Peak switching current I 350 LM Diode continuous forward current I T = 109 C 34 F C Peak diode forward current I 200 FM Gate to emitter voltage V 20 GE V RMS isolation voltage V Any terminal to case, t = 1 min 2500 ISOL T = 25 C 658 C Maximum power dissipation P W D T = 100 C 263 C ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V V = 0 V, I = 500 A 600 - - V (BR)CES GE C V = 15 V, I = 50 A - 2.3 3.15 GE C Collector to emitter voltage V V = 15 V, I = 100 A - 2.5 3.2 CE(on) GE C V V = 15 V, I = 50 A, T = 150 C - 1.72 2.17 GE C J Gate threshold voltage V I = 0.5 mA 3 - 6 GE(th) C V = 0 V, I = 600 A - - 0.4 GE C Collector to emitter leaking current I mA CES V = 0 V, I = 600 A, T = 150 C - - 10 GE C J I = 50 A, V = 0 V - 1.58 1.80 F GE Diode forward voltage drop V I = 50 A, V = 0 V, T = 150 C - 1.49 1.68 V FM F GE J I = 100 A, V = 0 V, T = 25 C - 1.9 2.17 F GE J Gate to emitter leakage current I V = 20 V - - 250 nA GES GE Revision: 09-Oct-17 Document Number: 94468 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q - 331 385 g I = 52 A C Gate to emitter charge (turn-on) Q V = 400 V -44 52 nC ge CC V = 15 V GE Gate to collector charge (turn-on) Q - 133 176 gc Turn-on switching loss E Internal gate resistors (see electrical diagram) -0.26 - on I = 50 A, V = 480 V, V = 15 V, L = 200 H C CC GE Turn-off switching loss E -1.2 - mJ off energy losses include tail and diode reverse Total switching loss E -1.46 - ts recovery, T = 25 C J Turn-on switching loss E Internal gate resistors (see electrical diagram) -0.73 - on I = 50 A, V = 480 V, V = 15 V, L = 200 H C CC GE Turn-off switching loss E -1.66 - off mJ energy losses include tail and diode reverse Total switching loss E -2.39 - recovery, T = 150 C ts J Input capacitance C - 7100 - ies V = 0 V GE Output capacitance C V = 30 V - 510 - pF oes CC f = 1.0 MHz Reverse transfer capacitance C - 140 - res Diode reverse recovery time t -82 97 ns rr V = 200 V, I = 50 A CC C Diode peak reverse current I - 8.3 10.6 A rr dI/dt = 200 A/s Diode recovery charge Q - 340 514 nC rr Diode reverse recovery time t - 137 153 ns rr V = 200 V, I = 50 A CC C Diode peak reverse current I dI/dt = 200 A/s - 12.7 14.8 A rr T = 125 C J Diode recovery charge Q - 870 1132 nC rr THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS (1) Resistance R T = 25 C - 30 - k 0 0 Sensitivity index of the T = 25 C 0 (1)(2) - 4000 - K thermistor material T = 85 C 1 Notes (1) T , T are thermistors temperatures 0 1 R 0 1 1 (2) ------- = exp ------ ------ , temperature in Kelvin R T T 1 0 1 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Operating junction IGBT, diode -40 - 150 T J temperature range Thermistor -40 - 125 C Storage temperature range T -40 - 125 Stg IGBT - - 0.38 Junction to case R thJC Diode - - 0.8 C/W Case to sink per module R Heatsink compound thermal conductivity = 1 W/mK - 0.06 - thCS (1) Clearance External shortest distance in air between 2 terminals 5.5 - - mm Shortest distance along the external surface of the (1) Creepage 8- - insulating material between 2 terminals A mounting compound is recommended and the Mounting torque to heatsink torque should be checked after 3 hours to allow for 3 10 % Nm the spread of the compound. Lubricated threads. Weight 66 g Note (1) Standard version only i.e. without optional thermistor Revision: 09-Oct-17 Document Number: 94468 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000