Technische Information / Technical Information IGBT-Module DDB6U75N16W1R IGBT-modules Vorlufige Daten Diode, Gleichrichter / Diode, Rectifier Preliminary Data Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1600 V vj RRM Repetitive peak reverse voltage Durchlassstrom Grenzeffektivwert pro Chip T = 100C I 65 A C FRMSM Maximum RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom T = 100C I 90 A C RMSM Maximum RMS current at rectifier output Stostrom Grenzwert t = 10 ms, T = 25C 605 A p vj I FSM Surge forward current tp = 10 ms, Tvj = 150C 470 A Grenzlastintegral tp = 10 ms, Tvj = 25C 1850 As It It - value t = 10 ms, T = 150C 1100 As p vj Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung T = 150C, I = 65 A V 1,10 V vj F F Forward voltage Sperrstrom Tvj = 150C, VR = 1600 V IR 1,00 mA Reverse current Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 0,65 0,72 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 0,80 K/W Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.0 1Technische Information / Technical Information IGBT-Module DDB6U75N16W1R IGBT-modules Vorlufige Daten Preliminary Data IGBT, Brems-Chopper / IGBT, Brake-Chopper Hchstzulssige Werte / Maximum Rated Values Kollektor-Emitter-Sperrspannung T = 25C V 1200 V vj CES Collector-emitter voltage Kollektor-Dauergleichstrom T = 100C, T = 175C I 50 A C vj max C nom Continuous DC collector current TC = 25C, Tvj max = 175C IC 69 A Periodischer Kollektor-Spitzenstrom t = 1 ms I 100 A P CRM Repetitive peak collector current Gesamt-Verlustleistung T = 25C, T = 175C P 335 W C vj max tot Total power dissipation Gate-Emitter-Spitzenspannung VGES +/-20 V Gate-emitter peak voltage Charakteristische Werte / Characteristic Values min. typ. max. Kollektor-Emitter-Sttigungsspannung I = 50 A, V = 15 V T = 25C 1,85 2,15 V C GE vj Collector-emitter saturation voltage I = 50 A, V = 15 V T = 125C V 2,15 V C GE vj CE sat I = 50 A, V = 15 V T = 150C 2,25 V C GE vj Gate-Schwellenspannung I = 1,60 mA, V = V , T = 25C V 5,2 5,8 6,4 V C CE GE vj GEth Gate threshold voltage Gateladung VGE = -15 V ... +15 V QG 0,38 C Gate charge Interner Gatewiderstand T = 25C R 4,0 vj Gint Internal gate resistor Eingangskapazitt f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 2,80 nF Input capacitance Rckwirkungskapazitt f = 1 MHz, T = 25C, V = 25 V, V = 0 V C 0,10 nF vj CE GE res Reverse transfer capacitance Kollektor-Emitter-Reststrom VCE = 1200 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Collector-emitter cut-off current Gate-Emitter-Reststrom V = 0 V, V = 20 V, T = 25C I 400 nA CE GE vj GES Gate-emitter leakage current Einschaltverzgerungszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,08 s C CE vj t d on Turn-on delay time, inductive load VGE = 15 V Tvj = 125C 0,085 s R = 22 T = 150C 0,085 s Gon vj Anstiegszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,044 s C CE vj t r Rise time, inductive load VGE = 15 V Tvj = 125C 0,05 s R = 22 T = 150C 0,052 s Gon vj Abschaltverzgerungszeit, induktive Last I = 50 A, V = 600 V T = 25C 0,37 s C CE vj t d off Turn-off delay time, inductive load VGE = 15 V Tvj = 125C 0,44 s R = 22 T = 150C 0,46 s Goff vj Fallzeit, induktive Last I = 50 A, V = 600 V T = 25C 0,10 s C CE vj t f Fall time, inductive load VGE = 15 V Tvj = 125C 0,16 s R = 22 T = 150C 0,17 s Goff vj Einschaltverlustenergie pro Puls I = 50 A, V = 600 V, L = 45 nH T = 25C 4,70 mJ C CE S vj Turn-on energy loss per pulse VGE = 15 V Tvj = 125C Eon 5,80 mJ R = 22 T = 150C 6,00 mJ Gon vj Abschaltverlustenergie pro Puls I = 50 A, V = 600 V, L = 45 nH T = 25C 3,10 mJ C CE S vj Turn-off energy loss per pulse VGE = 15 V, du/dt = 3700 V/s (Tvj = 150C)Tvj = 125C Eoff 4,40 mJ R = 22 T = 150C 4,90 mJ Goff vj Kurzschluverhalten V 15 V, V = 800 V GE CC ISC SC data VCEmax = VCES -LsCE di/dt tP 10 s, Tvj = 150C 180 A Wrmewiderstand, Chip bis Gehuse pro IGBT / per IGBT R 0,40 0,45 K/W thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro IGBT / per IGBT R 0,65 K/W thCH Thermal resistance, case to heatsink Paste = 1 W/(mK) / grease = 1 W/(mK) Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: DK date of publication: 2013-11-05 approved by: MB revision: 2.0 2