Technische Information / Technical Information IGBT-Modul DD1200S12H4 IGBT-Module IHM-B Modul IHM-B module Vorlufige Daten / Preliminary Data VCES = 1200V I = 1200A / I = 2400A C nom CRM Typische Anwendungen Typical Applications Hochleistungsumrichter High power converters Motorantriebe Motor drives Multi-Level Umrichter Multi level inverter Windgeneratoren Wind turbines Elektrische Eigenschaften Electrical Features Erweiterte Sperrschichttemperatur T vj op Extended operating temperature Tvj op Mechanische Eigenschaften Mechanical Features 4 kV AC 1min Isolationsfestigkeit 4 kV AC 1min insulation Gehuse mit CTI > 400 Package with CTI > 400 Hohe Leistungsdichte High power density IHM B Gehuse IHM B housing Module Label Code Barcode Code 128 Content of the Code Digit Module Serial Number 1 - 5 Module Material Number 6 - 11 Production Order Number 12 - 19 DMX - Code Datecode (Production Year) 20 - 21 Datecode (Production Week) 22 - 23 prepared by: WB date of publication: 2015-11-05 approved by: IB revision: V2.3 UL approved (E83335) 1Technische Information / Technical Information IGBT-Modul DD1200S12H4 IGBT-Module Vorlufige Daten Preliminary Data Diode, Wechselrichter / Diode, Inverter Hchstzulssige Werte / Maximum Rated Values Periodische Spitzensperrspannung T = 25C V 1200 V vj RRM Repetitive peak reverse voltage Dauergleichstrom I 1200 A F Continuous DC forward current Periodischer Spitzenstrom t = 1 ms I 2400 A P FRM Repetitive peak forward current Grenzlastintegral V = 0 V, t = 10 ms, T = 125C 155 kAs R P vj It It - value VR = 0 V, tP = 10 ms, Tvj = 150C 150 kAs Spitzenverlustleistung Tvj = 125C PRQM 1200 kW Maximum power dissipation Charakteristische Werte / Characteristic Values min. typ. max. Durchlassspannung I = 1200 A, V = 0 V T = 25C 1,80 2,35 V F GE vj Forward voltage I = 1200 A, V = 0 V T = 125C V 1,75 V F GE vj F I = 1200 A, V = 0 V T = 150C 1,70 V F GE vj Rckstromspitze I = 1200 A, - di /dt = 4950 A/s (T =150C) T = 25C 475 A F F vj vj Peak reverse recovery current V = 600 V T = 125C I 660 A R vj RM V = -15 V T = 150C 720 A GE vj Sperrverzgerungsladung I = 1200 A, - di /dt = 4950 A/s (T =150C) T = 25C 100 C F F vj vj Recovered charge V = 600 V T = 125C Q 195 C R vj r V = -15 V T = 150C 220 C GE vj Abschaltenergie pro Puls I = 1200 A, - di /dt = 4950 A/s (T =150C) T = 25C 45,0 mJ F F vj vj Reverse recovery energy V = 600 V T = 125C E 80,0 mJ R vj rec V = -15 V T = 150C 90,0 mJ GE vj Wrmewiderstand, Chip bis Gehuse pro Diode / per diode R 40,0 K/kW thJC Thermal resistance, junction to case Wrmewiderstand, Gehuse bis Khlkrper pro Diode / per diode RthCH 22,0 K/kW Thermal resistance, case to heatsink = 1 W/(mK) / = 1 W/(mK) Paste grease Temperatur im Schaltbetrieb T -40 150 C vj op Temperature under switching conditions prepared by: WB date of publication: 2015-11-05 approved by: IB revision: V2.3 2