VS-50PF(R)...(W) High Voltage Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 50 A FEATURES High surge current capability 50PF(R)... 50PF(R)...W Designed for a wide range of applications Stud cathode and stud anode version Wire version available Low thermal resistance Designed and qualified for multiple level Material categorization: For definitions of compliance DO-203AB (DO-5) DO-203AB (DO-5) please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Converters PRODUCT SUMMARY Power supplies I 50 A F(AV) Package DO-203AB (DO-5) Machine tool controls Circuit configuration Single diode Welding Any high voltage input rectification bridge MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 50 A I F(AV) T 128 C C I 78 A F(RMS) 50 Hz 570 I A FSM 60 Hz 595 50 Hz 1600 2 2 I t A s 60 Hz 1450 V Range 1400 to 1600 V RRM T -55 to 160 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 150 C J NUMBER CODE V V mA 140 1400 1650 VS-50PF(R)...(W) 4.5 160 1600 1900 Revision: 07-Apr-14 Document Number: 93517 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50PF(R)...(W) High Voltage Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 128 C Maximum RMS forward current I 78 A F(RMS) t = 10 ms 570 No voltage reapplied t = 8.3 ms 595 Maximum peak, one cycle forward, I A FSM non-repetitive surge current t = 10 ms 480 100 % V RRM reapplied t = 8.3 ms 500 Sinusoidal half wave, initial T = 150 C J t = 10 ms 1600 No voltage reapplied t = 8.3 ms 1450 2 2 2 Maximum I t for fusing I t A s t = 10 ms 1150 100 % V RRM reapplied t = 8.3 ms 1050 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.77 V F(TO) F(AV) F(AV) J J Low level value of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 4.30 m f F(AV) F(AV) J J Maximum forward voltage drop V I = 125 A, T = 25 C, t = 400 s rectangular wave 1.50 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and T , T -55 to 160 C J Stg storage temperature range Maximum thermal resistance, R DC operation 0.51 thJC junction to case K/W Thermal resistance, R Mounting surface, smooth, flat and greased 0.25 thCS case to heatsink 3.4 (1) Not lubricated thread, tighting on nut (30) 2.3 (1) Lubricated thread, tighting on nut Maximum allowable (20) N m mounting torque (lbf in) 4.2 (+0 %, -10 %) (2) Not lubricated thread, tighting on hexagon (37) 3.2 (2) Lubricated thread, tighting on hexagon (28) 15.8 g Approximate weight 0.56 oz. Case style See dimensions - link at the end of datasheet DO-203AB (DO-5) Notes (1) Recommended for pass-through holes (2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink Revision: 07-Apr-14 Document Number: 93517 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000