VS-50RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 50 A FEATURES High current rating Excellent dynamic characteristics dV/dt = 1000 V/s option Superior surge capabilities Standard package Metric threads version available Types up to 1200 V V /V TO-65 (TO-208AC) DRM RRM Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 50 A TYPICAL APPLICATIONS T(AV) 100 V, 200 V, 400 V, 600 V, 800 V, Phase control applications in converters V /V DRM RRM 1000 V, 1200 V Lighting circuits V 1.60 V TM Battery charges I 100 mA GT Regulated power supplies and temperature and speed T -40 C to 125 C J control circuit Package TO-65 (TO-208AC) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 50 A I T(AV) T 94 C C I 80 A T(RMS) 50 Hz 1430 I A TSM 60 Hz 1490 50 Hz 10.18 2 2 I t kA s 60 Hz 9.30 V /V 100 to 1200 V DRM RRM t Typical 110 s q T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V , MAXIMUM I /I MAXIMUM AT DRM RRM RSM DRM RRM TYPE VOLTAGE (1) (2) PEAK AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE T = T MAXIMUM J J NUMBER CODE V V mA 10 100 150 20 200 300 40 400 500 VS-50RIA 60 600 700 15 80 800 900 100 1000 1100 120 1200 1300 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/s (2) For voltage pulses with t 5 ms p Revision: 21-Sep-17 Document Number: 93711 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-50RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 A Maximum average on-state current I 180 sinusoidal conduction T(AV) at case temperature 94 C Maximum RMS on-state current I 80A T(RMS) t = 10 ms 1430 No voltage reapplied t = 8.3 ms 1490 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 1200 100 % V RRM reapplied t = 8.3 ms 1255 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 10.18 No voltage reapplied t = 8.3 ms 9.30 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 7.20 100 % V RRM reapplied t = 8.3 ms 6.56 t = 0.1 to 10 ms, no voltage reapplied, 2 2 2 Maximum I t for fusing I t 101.8 kA s T = T maximum J J Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.94 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V ( x I < I < 20 x x I ), T = T maximum 1.08 T(TO)2 T(AV) T(AV) J J Low level value of on-state r (16.7 % x x I < I < x I ), T = T maximum 4.08 t1 T(AV) T(AV) J J slope resistance m High level value of on-state r ( x I < I < 20 x x I ), T = T maximum 3.34 t2 T(AV) T(AV) J J slope resistance Maximum on-state voltage V I = 157 A, T = 25 C 1.60 V TM pk J T = 25 C, anode supply 22 V, resistive load, J Maximum holding current I 200 H initial I = 2 A T mA Latching current I Anode supply 6 V, resistive load 400 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS V 600 V T = 125 C, V = Rated V , 200 DRM C DM DRM Maximum rate of dI/dt Gate pulse = 20 V, 15 , t = 6 s, t = 0.1 s maximum A/s p r rise of turned-on current V 1600 V I = (2 x rated dI/dt) A 100 DRM TM T = 25 C, V = Rated V , I = 10 A dc resistive circuit C DM DRM TM Typical delay time t 0.9 d Gate pulse = 10 V, 15 source, t = 20 s p s T = 125 C, I = 50 A, reapplied dV/dt = 20 V/s C TM Typical turn-off time t 110 q dIr/dt = - 10 A/s, V = 50 V R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = T maximum linear to 100 % rated V 200 J J DRM Maximum critical rate of rise of dV/dt V/s off-state voltage (1) T = T maximum linear to 67 % rated V 500 J J DRM Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i.e. 50RIA120S90 Revision: 21-Sep-17 Document Number: 93711 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000