110/111RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 110 A FEATURES High current and high surge ratings RoHS Hermetic ceramic housing COMPLIANT RoHS compliant Designed and qualified for industrial level TO-209AC (TO-94) TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies PRODUCT SUMMARY I 110 A T(AV) AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 110 A I T(AV) T 90 C C I 172 A T(RMS) 50 Hz 2080 I A TSM 60 Hz 2180 50 Hz 21.7 2 2 I t kA s 60 Hz 19.8 V /V 400 to 1200 V DRM RRM t Typical 110 s q T - 40 to 140 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM DRM RRM RSM I /I MAXIMUM DRM RRM TYPE VOLTAGE REPETITIVE PEAK AND NON-REPETITIVE PEAK AT T = T MAXIMUM J J NUMBER CODE OFF-STATE VOLTAGE VOLTAGE mA V V 40 400 500 110/111RKI 20 80 800 900 120 1200 1300 Document Number: 93692 For technical questions, contact: ind-modules vishay.com www.vishay.com Revision: 06-Jun-08 1 110/111RKI Series Phase Control Thyristors Vishay High Power Products (Stud Version), 110 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 110 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 90 C Maximum RMS on-state current I DC at 83 C case temperature 172 A T(RMS) t = 10 ms 2080 No voltage reapplied t = 8.3 ms 2180 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 1750 100 % V RRM reapplied t = 8.3 ms 1830 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 21.7 No voltage reapplied t = 8.3 ms 19.8 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 15.3 100 % V RRM reapplied t = 8.3 ms 14.0 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 217 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.82 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.02 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 2.16 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 1.70 t2 T(AV) J J Maximum on-state voltage V I = 350 A, T = T maximum, t = 10 ms sine pulse 1.57 V TM pk J J p Maximum holding current I 200 H T = 25 C, anode supply 6 V resistive load mA J Typical latching current I 400 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise Gate drive 20 V, 20 , t 1 s r dI/dt 300 A/s of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.0 d V = 0.67 % V , T = 25 C d DRM J s I = 50 A, T = T maximum, dI/dt = - 5 A/s, TM J J Typical turn-off time t 110 q V = 50 V, dV/dt = 20 V/s gate 0 V 25 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM of off-state voltage Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 20 mA J J DRM RRM off-state leakage current I DRM www.vishay.com For technical questions, contact: ind-modules vishay.com Document Number: 93692 2 Revision: 06-Jun-08