VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 175 C operating junction temperature Designed and qualified according to TO-247AC modified TO-247AC JEDEC -JESD 47 Material categorization: Cathode Cathode for definitions of compliance please see to base to base Available 2 www.vishay.com/doc 99912 2 BENEFITS Reduced RFI and EMI 3 1 3 1 Higher frequency operation Cathode Anode Anode Anode Reduced snubbing VS-60EPU04PbF VS-60APU04PbF Reduced parts count VS-60EPU04-N3 VS-60APU04-N3 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY TO-247AC modified (2 pins), These diodes are optimized to reduce losses and EMI/RFI in Package TO-247AC high frequency power conditioning systems. I 60 A F(AV) The softness of the recovery eliminates the need for a V 400 V R snubber in most applications. These devices are ideally V at I 0.87 V F F suited for HF welding, power converters and other t typ. See Recovery table rr applications where switching losses are not significant T max. 175 C portion of the total losses. J Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 400 V R Continuous forward current I T = 127 C 60 F(AV) C Single pulse forward current I T = 25 C 600 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 120 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 400 - - R blocking voltage V R I = 60 A - 1.05 1.25 F V Forward voltage V I = 60 A, T = 175 C - 0.87 1.03 F F J I = 60 A, T = 125 C - 0.93 1.10 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 400 V - 50 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 09-Jul-15 Document Number: 94022 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 200 A/s, V = 30 V - 50 60 F F R Reverse recovery time t T = 25 C -85 - ns rr J T = 125 C - 145 - J I = 60 A F T = 25 C - 8.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 15.4 - J V = 200 V R T = 25 C - 375 - J Reverse recovery charge Q nC rr T = 125 C - 1120 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R --0.70 thJC junction to case K/W Thermal resistance, Mounting surface, flat, smooth R -0.2 - thCS case to heatsink and greased -5.5 - g Weight -0.2 - oz. 1.2 2.4 N m - (10) (20) (lbf in) Mounting torque Case style TO-247AC modified 60EPU04 Marking device Case style TO-247AC 60APU04 Revision: 09-Jul-15 Document Number: 94022 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000