VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors High Voltage Input Rectifier Diode, 60 A FEATURES Base cathode Very low forward voltage drop 150 C max. operating junction temperature 2 Glass passivated pellet chip junction 2 Designed and qualified according to 3 JEDEC -JESD 47 1 Material categorization: Available 13 for definitions of compliance please see TO-247AC modied Cathode Anode www.vishay.com/doc 99912 APPLICATIONS PRODUCT SUMMARY Input rectification Package TO-247AC modified (2 pins) Vishay Semiconductors switches and output rectifiers I 60 A F(AV) which are available in identical package outlines V 1600 V R DESCRIPTION V at I 1.15 V F F High voltage rectifiers optimized for very low forward I 950 A FSM voltage drop with moderate leakage. T max. 150 C J These devices are intended for use in main rectification Diode variation Single die (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 60 A F(AV) V 1600 V RRM I 950 A FSM V 60 A, T = 25 C 1.15 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE RRM RSM I AT 150 C RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE mA V V VS-60EPS16PbF 1600 1700 1 VS-60EPS16-M3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 118 C, 180 conduction half sine wave 60 F(AV) C 10 ms sine pulse, rated V applied 800 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 950 10 ms sine pulse, rated V applied 3200 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 4525 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 45 250 A s Revision: 12-Feb-16 Document Number: 94346 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPS16PbF, VS-60EPS16-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS 30 A, T = 25 C 1.0 J Maximum forward voltage drop V V FM 60 A, T = 25 C 1.15 J Forward slope resistance r 3.96 m t T = 150 C J Threshold voltage V 0.74 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.0 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, R DC operation 0.35 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6.0 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC modified (JEDEC) 60EPS16 Revision: 12-Feb-16 Document Number: 94346 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000