VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES Ultrafast recovery time Low forward voltage drop 1 1 175 C operating junction temperature 2 33 Output rectification 3 TO-247AC 2L TO-247AC 3L Designed and qualified according to JEDEC -JESD 47 Base Base Material categorization: for definitions of compliance common common cathode please see www.vishay.com/doc 99912 cathode 2 2 BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing 1 3 Anode Anode Cathode Anode 1 3 Reduced parts count VS-60EPU02-N3 VS-60APU02-N3 DESCRIPTION / APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in PRIMARY CHARACTERISTICS high frequency power conditioning systems. I 60 A F(AV) The softness of the recovery eliminates the need for a V 200 V snubber in most applications. These devices are ideally R V at I 0.81 V suited for HF welding, power converters and other F F t typ. See Recovery table applications where switching losses are not significant rr portion of the total losses. T max. 175 C J Package TO-247AC 2L, TO-247AC 3L Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 200 V R Continuous forward current I T = 127 C 60 F(AV) C Single pulse forward current I T = 25 C, t = 10 ms 800 A FSM C p Maximum repetitive forward current I Square wave, 20 kHz 120 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R V blocking voltage R V I = 60 A - 0.98 1.08 F Forward voltage V F I = 60 A, T = 175 C - 0.81 0.88 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 200 V - 87 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 29-Nov-2019 Document Number: 94021 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-60EPU02-N3, VS-60APU02-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - - 35 F F R Reverse recovery time t T = 25 C -28- ns rr J T = 125 C - 50 - J I = 60 A F T = 25 C - 4 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 8 - J V = 160 V R T = 25 C - 59 - J Reverse recovery charge Q nC rr T = 125 C - 220 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R - - 0.70 K/W thJC Thermal resistance, junction to ambient R Typical socket mount - - 40 C/W thJA per leg Mounting surface, flat, smooth, Thermal resistance, case to heatsink R -0.2 - K/W thCS and greased -5.5 - g Weight -0.2 - oz. Mounting torque -- 1.2 N m Case style TO-247AC 2L 60EPU02 Marking device Case style TO-247AC 3L 60APU02 1000 1000 100 T = 175 C J T = 125 C 100 10 J 1 T = 175 C J T = 150 C J 10 0.1 T = 25 C T = 25 C J J 0.01 1 0.001 0 0.5 1 1.5 2 2.5 0 50 100 150 200 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 29-Nov-2019 Document Number: 94021 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous F Forward Current (A) I - Reverse Current (A) R